Part A
2N7002K-T1-GE3
실리콘 닉스
- Lifecycle
- Active
- Stock
- 4371 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-T1-GE3 is a compatible functional replacement candidate for the 2N7002,215, with both N-channel MOSFETs sharing identical drain-source voltage, continuous drain current, and RDS(on) characteristics. Designers should validate gate threshold voltage tolerance and package footprint compatibility before committing to a drop-in substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Gate Threshold Voltage
Validation required
Package Type
Validation required
Parts at a glance
Part B
2N7002,215
넥스페리아 USA 주식회사
- Lifecycle
- Active
- Stock
- 6582 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K-T1-GE3 | 2N7002,215 |
|---|---|---|
| Series | TrenchFET® | TrenchMOS™ |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 25 V | 50 pF @ 10 V |
| Power Dissipation (Max) | 350mW (Ta) | 830mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |