2N7002A-7 vs 2N7002DW

2N7002A-7과 2N7002DW에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002A-7 are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002 electrical family, and SOT-363 surface-mount footprint, making them strong functional replacement candidates. Designers should validate gate threshold spread, RDS(on) at the target VGS, and continuous drain current margin against the specific application before committing to a drop-in substitution.

Channel Configuration High match
Drain-Source Voltage Rating High match
Continuous Drain Current Validation required
On-Resistance RDS(on) Validation required

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002A-7 2N7002DW
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 180mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 5V, 10V -
Rds On(Max) @ Id Vgs 6Ohm @ 115mA, 5V -
Vgs(th)(Max) @ Id 2V @ 250µA -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 23 pF @ 25 V -
Power Dissipation (Max) 370mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - 2N7002
Configuration - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Current - Continuous Drain (Id) @ 25°C - 115mA
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds - 50pF @ 25V
Power - Max - 200mW
Packaging - Cut Tape (CT), Tape & Reel (TR)