2N7002A-7
다이오즈(주)
- Lifecycle
- Active
- Stock
- 1569 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
2N7002A-7과 2N7002DW에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.
Replacement verdict
The 2N7002DW and 2N7002A-7 are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002 electrical family, and SOT-363 surface-mount footprint, making them strong functional replacement candidates. Designers should validate gate threshold spread, RDS(on) at the target VGS, and continuous drain current margin against the specific application before committing to a drop-in substitution.
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | 2N7002A-7 | 2N7002DW |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60V |
| Current - Continuous Drain(Id) @ 25°C | 180mA (Ta) | - |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | - |
| Rds On(Max) @ Id Vgs | 6Ohm @ 115mA, 5V | - |
| Vgs(th)(Max) @ Id | 2V @ 250µA | - |
| Vgs(Max) | ±20V | - |
| Input Capacitance(Ciss)(Max) @ Vds | 23 pF @ 25 V | - |
| Power Dissipation (Max) | 370mW (Ta) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | - | 2N7002 |
| Configuration | - | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Current - Continuous Drain (Id) @ 25°C | - | 115mA |
| Rds On (Max) @ Id, Vgs | - | 7.5Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | - | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | - | 50pF @ 25V |
| Power - Max | - | 200mW |
| Packaging | - | Cut Tape (CT), Tape & Reel (TR) |