Part A
2N7002K-T1-GE3
실리콘 닉스
- Lifecycle
- Active
- Stock
- 4371 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-T1-GE3 is a viable functional replacement candidate for the 2N7002DW in single-channel switching applications, provided the designer accounts for the dual-to-single channel count reduction and verifies thermal and gate-threshold margins in the target circuit.
Channel Configuration
Validation required
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package and Footprint
Validation required
Parts at a glance
Part B
2N7002DW
온세미
- Lifecycle
- Active
- Stock
- 6631 PCS
- Series
- 트랜지스터-FET, MOSFET-FET, MOSFET 어레이
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002DW | 2N7002K-T1-GE3 | Why it matters |
|---|---|---|---|
| Channel Configuration | Dual N-Channel | Single N-Channel | Determines whether one package can replace two discrete transistors or only one, directly affecting board layout and component count. |
| Drain-Source Voltage (VDS) | 60 V | 60 V | Sets the maximum voltage the device can block in the off state; must meet or exceed the application rail voltage. |
| Continuous Drain Current (ID) | 115 mA | 300 mA | Defines the maximum steady-state current the MOSFET can carry, limiting the load it can drive. |
| RDS(on) at VGS = 10 V | 7.5 Ω | 1.6 Ω | Lower on-resistance reduces conduction losses and voltage drop, improving efficiency and thermal performance. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Determines the gate voltage needed to turn the device on; compatibility ensures proper logic-level drive. |
| Power Dissipation (PD) | 200 mW | 350 mW | Indicates the maximum power the package can dissipate, affecting thermal design and safe operating area. |
| Package / Mounting | SOT-363 (SC-70-6) Surface Mount | SOT-23 (TO-236) Surface Mount | Footprint and pinout must match the PCB layout for a drop-in replacement. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; similar values support comparable dynamic behavior. |
| Operating Junction Temperature | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window and must cover the application's ambient and self-heating conditions. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K-T1-GE3 | 2N7002DW |
|---|---|---|
| Series | TrenchFET® | - |
| Part Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | - |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | - |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | - |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | - |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | - |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 25 V | - |
| Power Dissipation (Max) | 350mW (Ta) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | - | 2N7002 |
| Configuration | - | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Current - Continuous Drain (Id) @ 25°C | - | 115mA |
| Rds On (Max) @ Id, Vgs | - | 7.5Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | - | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | - | 50pF @ 25V |
| Power - Max | - | 200mW |
| Packaging | - | Cut Tape (CT), Tape & Reel (TR) |
Frequently asked questions
What are the main differences between the 2N7002DW and the 2N7002K-T1-GE3?
The 2N7002DW is a dual N-channel MOSFET offered in a single package, while the 2N7002K-T1-GE3 is a single N-channel MOSFET. The 2N7002DW integrates two electrically isolated 2N7002-type MOSFETs, whereas the 2N7002K-T1-GE3 contains one MOSFET with a different package and electrical characteristic set.
Are the 2N7002DW and 2N7002K-T1-GE3 pin-compatible?
No. The 2N7002DW is typically supplied in a 6-pin package such as SOT-363 or SC-70-6, while the 2N7002K-T1-GE3 is supplied in a 3-pin package such as SOT-23. The pin counts, pin functions, and PCB land patterns differ, so they are not drop-in replacements.
Can the 2N7002K-T1-GE3 replace one half of a 2N7002DW in an existing design?
Only if the circuit uses just one of the two MOSFETs in the 2N7002DW and the board can accommodate the different package footprint and pinout of the 2N7002K-T1-GE3. Electrical parameters such as threshold voltage, on-resistance, and current ratings must also be verified against the manufacturer datasheets before substitution.
Do both devices have the same voltage and current ratings?
Both are 60 V N-channel MOSFETs, but their current and power ratings differ because of package and die differences. The 2N7002DW is typically rated for lower continuous drain current per channel than the 2N7002K-T1-GE3, and the thermal performance depends on the package and PCB layout. Always confirm the exact ratings from the respective manufacturer datasheets.
Which device is better for space-constrained designs?
The 2N7002DW can be more space-efficient when two MOSFETs are required, because it integrates two channels in one package. The 2N7002K-T1-GE3 is a single-channel device, so two separate packages would be needed for a dual-channel function, consuming more board area.
Are the gate threshold voltages of the 2N7002DW and 2N7002K-T1-GE3 the same?
They are not guaranteed to be identical. Both are logic-level N-channel MOSFETs, but the gate threshold voltage range can differ between manufacturers and part variants. Designers must check the VGS(th) specification on the official datasheet for each specific part number.
Can both devices be used in low-side switching applications?
Yes, both are N-channel MOSFETs suitable for low-side switching, provided the voltage, current, and thermal requirements of the application are within the ratings of the selected device. The 2N7002DW can switch two independent low-side loads, while the 2N7002K-T1-GE3 switches one.
What package options are available for each part?
The 2N7002DW is commonly available in 6-pin surface-mount packages such as SOT-363 and SC-70-6. The 2N7002K-T1-GE3 is commonly available in a 3-pin SOT-23 package. Package availability may vary by manufacturer, so consult the specific datasheet and distributor listing for the exact part number.