2N7002A-7
다이오즈(주)
- Lifecycle
- Active
- Stock
- 1569 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
2N7002A-7과 2N7002K-7에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.
Replacement verdict
The 2N7002K-7 and 2N7002A-7 are both 60 V, 300 mA N-channel enhancement-mode MOSFETs in the SOT-23 package, sharing identical pinout, threshold voltage range, and small-signal switching characteristics. The 2N7002K-7 offers a lower maximum on-resistance and higher pulsed drain current capability, making it the more robust choice for demanding switching and level-shifting applications, while the 2N7002A-7 remains a cost-effective alternative for general-purpose low-current designs. Both devices are functionally interchangeable in most circuits, though designers should verify thermal and pulsed-current margins when substituting the 2N7002A-7 into high-stress applications originally specified with the 2N7002K-7.
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Use manufacturer datasheets as the final authority.
| Specification | 2N7002A-7 | 2N7002K-7 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 180mA (Ta) | 380mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 115mA, 5V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA | 2.5V @ 1mA |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 23 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 370mW (Ta) | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Charge(Qg)(Max) @ Vgs | - | 0.3 nC @ 4.5 V |