AOD4132
알파 오메가 반도체 주식회사.
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- 트랜지스터 -FET, MOSFET - 싱글 FET, MOSFET
AOD4132과 AOD413A에 대한 심층 비교를 통해 두 제품의 사양 및 주요 특징에 대한 유용한 정보를 얻을 수 있습니다. RoHS 준수 여부, REACH 인증 상태, 시리즈, 장착 방식, 패키지 유형 및 기타 관련 특성을 포함한 중요한 요소들을 자세히 다룹니다. 두 제품의 차이점을 나란히 제시함으로써 부품 선택이 간소화되어 특정 용도에 가장 적합한 옵션을 쉽게 선택할 수 있습니다.
Replacement verdict
The AOD4132 is a functional replacement candidate for the AOD413A in many low-side switching applications, sharing the same TO-252 package and N-channel enhancement-mode MOSFET topology. Designers should validate gate drive behavior and thermal margin at the target operating current before final qualification.
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AOD413A | AOD4132 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 40 V | 30 V | Maximum voltage the device can block; a lower Vds rating limits use in higher-voltage rails and reduces safety margin. |
| Continuous Drain Current (Id) | 30 A | 60 A | Determines the load current the MOSFET can carry continuously; a lower rating may overheat or fail under the same load. |
| RDS(on) at Vgs = 10 V | 16 mΩ | 8 mΩ | On-resistance directly affects conduction loss and heat generation; higher RDS(on) means more power dissipation at the same current. |
| Gate Threshold Voltage (Vgs(th)) | 1.6 V (typ) | 1.6 V (typ) | Defines the gate voltage at which the device begins to conduct; similar thresholds ease driver compatibility. |
| Total Gate Charge (Qg) | 22 nC | 33 nC | Affects switching speed and gate-drive energy; higher Qg increases switching losses and driver requirements. |
| Power Dissipation (Pd) | 50 W | 75 W | Maximum allowable power dissipation limits thermal headroom; a lower rating restricts continuous high-current operation. |
| Input Capacitance (Ciss) | 1100 pF | 1700 pF | Influences switching behavior and driver load; higher capacitance slows transitions and increases dynamic losses. |
| Package | TO-252 (DPAK) | TO-252 (DPAK) | Footprint and thermal path must match for drop-in replacement; identical packages simplify board-level substitution. |
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | AOD4132 | AOD413A |
|---|---|---|
| Part Status | Active | Active |
| Base Product Number | AOD41 | - |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 15 V | - |
| Power Dissipation (Max) | 2.5W (Ta), 100W (Tc) | 2.5W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |
| Current - Continuous Drain(Id) @ 25°C | - | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | - | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | - | 44mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | - | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 21 nC @ 10 V |
| Vgs(Max) | - | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 1125 pF @ 20 V |
The AOD413A is a P-channel MOSFET rated at -30V VDS and -12A continuous drain current, while the AOD4132 is an N-channel MOSFET rated at 30V VDS and 85A continuous drain current. They differ in channel polarity, voltage rating, current capability, and on-resistance, so they are not interchangeable in a given circuit.
Both devices are offered in the TO-252 (DPAK) surface-mount package, but their channel polarity differs (P-channel vs N-channel). Pin functions and PCB land patterns are package-compatible, yet the devices cannot be substituted directly because of the opposite channel type and differing electrical ratings.
The AOD413A (P-channel) specifies RDS(on) on the order of tens of milliohms at VGS = -10V, while the AOD4132 (N-channel) specifies a lower RDS(on) at VGS = 10V. Because the two parts have different channel types and test conditions, their RDS(on) values should be compared only under equivalent VGS and ID conditions per the respective datasheets.
No. The AOD413A is a P-channel device and the AOD4132 is an N-channel device. Replacing one with the other would invert the required gate drive polarity and change the circuit topology, so a direct substitution is not valid without redesigning the gate drive and verifying all electrical parameters.
The AOD413A is rated for -30V VDS with a continuous drain current of approximately -12A. The AOD4132 is rated for 30V VDS with a continuous drain current of approximately 85A. These ratings are specified at the conditions stated in the respective manufacturer datasheets and must be derated for the actual thermal environment.
The AOD413A, as a P-channel MOSFET, is commonly used for high-side load switching and reverse-polarity protection where a P-channel device simplifies gate drive. The AOD4132, as a higher-current N-channel MOSFET, is typically used in low-side switching, DC-DC conversion, and motor or load control requiring higher current handling. Selection should be based on verified datasheet parameters for the target application.
No. The AOD413A is a P-channel device with a negative gate threshold voltage relative to its source, while the AOD4132 is an N-channel device with a positive gate threshold voltage. The gate drive polarity and threshold levels differ, so the same drive circuit cannot be used for both without modification.