Part A
APTGT300A60TG
마이크로칩 기술
- Lifecycle
- Active
- Stock
- 2546 PCS
- Package
- SP-4
- Series
- 트랜지스터 -IGBT- 모듈
Replacement verdict
Compatible functional replacement candidate
The APTGT100A60TG is not a drop-in substitute for the APTGT300A60TG: both are 600 V IGBT modules in the same APTGT family and package outline, but the APTGT100A60TG delivers roughly one-third of the rated current, so replacement is only viable in applications whose load current stays within the lower-rated device's limits and where the reduced power capability is acceptable.
Current Rating
Validation required
Collector-Emitter Voltage
High match
Package Type
High match
Power Dissipation
Validation required
Parts at a glance
Part B
APTGT100A60TG
미고삼미 회사
- Lifecycle
- Active
- Stock
- 8974 PCS
- Package
- SP-4
- Series
- 트랜지스터 -IGBT- 모듈
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | APTGT300A60TG | APTGT100A60TG | Why it matters |
|---|---|---|---|
| Collector Current (Ic) at Tc=80°C | 300 A | 100 A | Rated current determines the load the device can carry; a 3x lower rating means the 100A part cannot directly substitute in high-current designs. |
| Power Dissipation (Ptot) at Tc=25°C | 1000 W | 395 W | Maximum allowable dissipation limits thermal headroom; the lower-rated part will overheat sooner under the same load. |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 1.9 V (typ) at 300 A | 1.9 V (typ) at 100 A | Conduction loss depends on Vce(sat) at the operating current; identical voltage at different currents means different absolute losses. |
| Input Capacitance (Cies) | 18 nF (typ) | 6.2 nF (typ) | Gate drive requirements scale with input capacitance; a larger die needs more gate charge and stronger drivers. |
| Total Gate Charge (Qg) | 900 nC (typ) | 300 nC (typ) | Gate charge affects switching speed and driver power; substituting requires verifying the gate driver can supply the higher charge. |
| Thermal Resistance Junction-to-Case (Rth(j-c)) | 0.15 °C/W (max) | 0.38 °C/W (max) | Lower thermal resistance allows more heat to escape per watt; the higher-resistance part needs a better heatsink for equivalent loading. |
| Short-Circuit Withstand Time | 10 µs (typ) | 10 µs (typ) | Short-circuit rating defines fault tolerance; both share similar ruggedness, but absolute fault current differs with die size. |
| Package / Mounting | SP6 (TO-247-style, screw mount) | SP6 (TO-247-style, screw mount) | Mechanical footprint and mounting must match for drop-in replacement; identical package simplifies substitution. |
| Collector-Emitter Voltage (Vces) | 600 V | 600 V | Voltage rating must meet or exceed bus voltage; matching 600 V ratings means both suit the same voltage class applications. |
| Configuration | Trench Field Stop IGBT | Trench Field Stop IGBT | Same technology family ensures comparable switching behavior and efficiency characteristics for design compatibility. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | APTGT300A60TG | APTGT100A60TG |
|---|---|---|
| Supplier | - | Microchip Technology |
| Part Status | Active | Discontinued at Digi-Key |
| IGBT Type | Trench Field Stop | Trench Field Stop |
| Configuration | Half Bridge | Half Bridge |
| Voltage - Collector Emitter Breakdown(Max) | 600 V | 600 V |
| Current - Collector(Ic)(Max) | 430 A | 150 A |
| Power - Max | 935 W | 340 W |
| Vce(on)(Max) @ Vge Ic | 1.9V @ 15V, 300A | 1.9V @ 15V, 100A |
| Current - Collector Cutoff(Max) | 350 µA | 250 µA |
| Input Capacitance(Cies) @ Vce | 18.4 nF @ 25 V | 6.1 nF @ 25 V |
| Input | Standard | Standard |
| NTC Thermistor | Yes | Yes |
| Operating Temperature | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount | Chassis Mount |
Frequently asked questions
What are the key differences between the APTGT300A60TG and APTGT100A60TG IGBTs?
The primary difference is current rating: the APTGT300A60TG is a 300 A collector current device, while the APTGT100A60TG is rated at 100 A. Both are 600 V IGBTs from Microchip (Microsemi) in the same TO-247 package family, but the higher-current part has lower on-state resistance and higher power dissipation capability, making them suited to different load levels.
Are the APTGT300A60TG and APTGT100A60TG pin-compatible?
Both devices are offered in TO-247 packages with the standard three-terminal IGBT pinout (gate, collector, emitter). However, designers must verify the exact package variant and thermal pad layout against the respective datasheets, since the higher-current APTGT300A60TG may use a different lead frame or mounting configuration.
Can the APTGT100A60TG be substituted for the APTGT300A60TG in an existing design?
Not directly. The APTGT100A60TG has a lower collector current rating (100 A vs 300 A) and higher on-state voltage drop, so it cannot handle the same load current. Substitution is only acceptable if the application's actual current and thermal requirements fall within the 100 A device's ratings and all parameters are validated against the datasheet.
What is the maximum collector-emitter voltage for both devices?
Both the APTGT300A60TG and APTGT100A60TG are rated for a maximum collector-emitter voltage (Vces) of 600 V, making them suitable for 400 V-class and lower bus applications with appropriate derating.
Do both parts include an anti-parallel freewheeling diode?
Yes. Both the APTGT300A60TG and APTGT100A60TG are offered as IGBTs with an integrated anti-parallel fast recovery diode (co-packaged), which supports inductive load switching and freewheeling in inverter and motor drive applications. Confirm the diode ratings in the respective datasheets.
Which part should be selected for higher power motor drive applications?
The APTGT300A60TG is the appropriate choice for higher-power motor drive and inverter applications because its 300 A collector current rating and lower conduction losses support higher output power. The APTGT100A60TG is better suited to lower-power drives within its 100 A rating.
Are the gate drive requirements the same for both devices?
Both are gate-controlled IGBTs requiring a recommended gate-emitter drive voltage (typically +15 V on, negative off-bias for reliable turn-off). Because the APTGT300A60TG has a larger die and higher input capacitance, it requires more gate charge and a driver capable of higher peak current. Verify gate charge and switching parameters in each datasheet.