Part A
FDG6301N
온세미
- Lifecycle
- Active
- Stock
- 7191 PCS
- Series
- 트랜지스터-FET, MOSFET-FET, MOSFET 어레이
Parts at a glance
Part B
FDG6304P_D87Z
온세미
- Lifecycle
- Active
- Stock
- 8852 PCS
- Package
- SC-88
- Series
- 트랜지스터 -FET, MOSFET - 어레이
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | FDG6301N | FDG6304P_D87Z |
|---|---|---|
| Supplier | - | onsemi |
| Part Status | Obsolete | Obsolete |
| FET Type | - | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V | 25V |
| Current - Continuous Drain(Id) @ 25°C | - | 410mA |
| Rds On(Max) @ Id Vgs | - | 1.1Ohm @ 410mA, 4.5V |
| Vgs(th)(Max) @ Id | - | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 1.5nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 62pF @ 10V |
| Power - Max | 300mW | 300mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | FDG6301 | - |
| Technology | MOSFET (Metal Oxide) | - |
| Configuration | 2 N-Channel (Dual) | - |
| Current - Continuous Drain (Id) @ 25°C | 220mA | - |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 220mA, 4.5V | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |