Part A
SI2304BDS-T1-E3
실리콘 닉스
- Lifecycle
- Active
- Stock
- 6443 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
Parts at a glance
Part B
SI2302DDS-T1-GE3
실리콘 닉스
- Lifecycle
- Active
- Stock
- 4873 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | SI2304BDS-T1-E3 | SI2302DDS-T1-GE3 |
|---|---|---|
| Series | TrenchFET® | TrenchFET® |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 2.6A (Ta) | 2.9A (Tj) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 70mOhm @ 2.5A, 10V | 57mOhm @ 3.6A, 4.5V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 850mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 4 nC @ 5 V | 5.5 nC @ 4.5 V |
| Vgs(Max) | ±20V | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 225 pF @ 15 V | - |
| Power Dissipation (Max) | 750mW (Ta) | 710mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |