Part A
SI2308BDS-T1-GE3
실리콘 닉스
- Lifecycle
- Active
- Stock
- 3090 PCS
- Series
- 트랜지스터 -FET, MOSFET - 싱글 FET, MOSFET
Parts at a glance
Part B
SI2302CDS-T1-E3
실리콘 닉스
- Lifecycle
- Active
- Stock
- 5255 PCS
- Package
- SOT-23-3
- Series
- 트랜지스터 -FET, MOSFET - 싱글
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | SI2308BDS-T1-GE3 | SI2302CDS-T1-E3 |
|---|---|---|
| Series | TrenchFET® | TrenchFET® |
| Part Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 20 V |
| Current - Continuous Drain(Id) @ 25°C | - | 2.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | - | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | - | 57mOhm @ 3.6A, 4.5V |
| Vgs(th)(Max) @ Id | - | 850mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 5.5 nC @ 4.5 V |
| Vgs(Max) | - | ±8V |
| Power Dissipation (Max) | 1.09W (Ta), 1.66W (Tc) | 710mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | SI2308 | - |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.9A, 10V | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 30 V | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |