Part A
SI2319DS-T1-E3
실리콘 닉스
- Lifecycle
- Active
- Stock
- 5584 PCS
- Series
- 트랜지스터 -FET, MOSFET - 싱글 FET, MOSFET
Parts at a glance
Part B
SI2312BDS-T1-E3
실리콘 닉스
- Lifecycle
- Active
- Stock
- 5515 PCS
- Package
- SOT-23
- Series
- 트랜지스터 -FET, MOSFET - 싱글
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | SI2319DS-T1-E3 | SI2312BDS-T1-E3 |
|---|---|---|
| Series | TrenchFET® | TrenchFET® |
| Part Status | Obsolete | Active |
| Base Product Number | SI2319 | - |
| FET Type | P-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 3A, 10V | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 20 V | - |
| Power Dissipation (Max) | 750mW (Ta) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |
| Current - Continuous Drain(Id) @ 25°C | - | 3.9A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | - | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | - | 31mOhm @ 5A, 4.5V |
| Vgs(th)(Max) @ Id | - | 850mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 12 nC @ 4.5 V |
| Vgs(Max) | - | ±8V |