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2N7002-7-F
+BOMMOSFET N-CH 60V 115MA SOT23-3
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제조업체다이오즈(주)
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제조업체 부품 #2N7002-7-F
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데이터시트 2N7002-7-F DataSheet
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패키지 SOT-23-3
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재고5757
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 115mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 50 pF @ 25 V |
| PowerDissipation(Max) | 370mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
개요
Description
The 2N7002-7-F is an N-channel MOSFET designed for general-purpose switching applications. Manufactured by Diodes Incorporated, it features a low on-state resistance and is optimized for low voltage and high-speed switching. Key specifications include a drain-source voltage (V_ds) of 60V, a continuous drain current (I_d) of 200mA, and a low threshold voltage, making it suitable for interfacing with low-voltage digital systems.
Packaged in a compact SOT-23, the 2N7002-7-F is ideal for space-constrained applications such as portable electronics, where efficient power management is essential. Its fast switching speed improves operational efficiency, while its robust design enhances reliability in various environmental conditions.
Typical applications include load switching, signal processing, and level shifting in circuits. Its versatility and reliability make the 2N7002-7-F a popular choice in both consumer and industrial electronics. When implementing this MOSFET, careful consideration of power dissipation and maximum ratings is recommended to ensure optimal performance and longevity.
Packaged in a compact SOT-23, the 2N7002-7-F is ideal for space-constrained applications such as portable electronics, where efficient power management is essential. Its fast switching speed improves operational efficiency, while its robust design enhances reliability in various environmental conditions.
Typical applications include load switching, signal processing, and level shifting in circuits. Its versatility and reliability make the 2N7002-7-F a popular choice in both consumer and industrial electronics. When implementing this MOSFET, careful consideration of power dissipation and maximum ratings is recommended to ensure optimal performance and longevity.
Equivalent
The 2N7002-7-F is a N-channel MOSFET commonly used for switching and amplification purposes. Equivalent products include:
1. 2N7000
2. BSS138
3. BS170
4. MMBF170
5. NDS7002A
These alternatives provide similar functionality and electrical characteristics, but it's crucial to verify specific parameters like threshold voltage, drain current, and package type to ensure full compatibility with your application.
1. 2N7000
2. BSS138
3. BS170
4. MMBF170
5. NDS7002A
These alternatives provide similar functionality and electrical characteristics, but it's crucial to verify specific parameters like threshold voltage, drain current, and package type to ensure full compatibility with your application.
Features
The 2N7002-7-F is a small-signal MOSFET designed for general-purpose switching applications. Key features include:
1. N-Channel MOSFET: It is an N-channel enhancement-mode MOSFET.
2. Voltage Rating: The device can handle a drain-source voltage (V_DS) of up to 60V.
3. Current Rating: It has a continuous drain current (I_D) rating of 200mA.
4. Low On-Resistance: The MOSFET features a low on-state resistance (R_DS(on)) of approximately 1.2 ohms at V_GS = 10V, ensuring efficient operation with minimal power loss.
5. Package: It is available in a standard SOT-23 package, making it suitable for space-constrained applications.
6. Fast Switching: The device offers fast switching speed, which is beneficial for high-speed applications.
7. Logic Level: It can be driven directly by logic-level signals due to its low gate threshold voltage.
8. Thermal Performance: The MOSFET provides decent thermal performance, suitable for moderate power applications.
These features make it ideal for battery-operated devices, load switches, and signal processing tasks.
1. N-Channel MOSFET: It is an N-channel enhancement-mode MOSFET.
2. Voltage Rating: The device can handle a drain-source voltage (V_DS) of up to 60V.
3. Current Rating: It has a continuous drain current (I_D) rating of 200mA.
4. Low On-Resistance: The MOSFET features a low on-state resistance (R_DS(on)) of approximately 1.2 ohms at V_GS = 10V, ensuring efficient operation with minimal power loss.
5. Package: It is available in a standard SOT-23 package, making it suitable for space-constrained applications.
6. Fast Switching: The device offers fast switching speed, which is beneficial for high-speed applications.
7. Logic Level: It can be driven directly by logic-level signals due to its low gate threshold voltage.
8. Thermal Performance: The MOSFET provides decent thermal performance, suitable for moderate power applications.
These features make it ideal for battery-operated devices, load switches, and signal processing tasks.
Pinout
The 2N7002-7-F is an N-channel MOSFET commonly used for switching applications. It is typically housed in a SOT-23 package, which consists of 3 pins. Here are the pin functions:
1. Gate (G): This pin controls the MOSFET. When voltage is applied to the gate, it allows current to flow between the drain and source.
2. Source (S): The source is the terminal through which the carriers (electrons, for N-channel) enter the MOSFET.
3. Drain (D): The drain is the terminal through which the carriers leave the MOSFET.
The 2N7002-7-F is used in various applications, such as signal switching and amplification due to its ability to handle moderate levels of power efficiently.
1. Gate (G): This pin controls the MOSFET. When voltage is applied to the gate, it allows current to flow between the drain and source.
2. Source (S): The source is the terminal through which the carriers (electrons, for N-channel) enter the MOSFET.
3. Drain (D): The drain is the terminal through which the carriers leave the MOSFET.
The 2N7002-7-F is used in various applications, such as signal switching and amplification due to its ability to handle moderate levels of power efficiently.
Manufacturer
The 2N7002-7-F is manufactured by Diodes Incorporated. Diodes Incorporated is a global company that specializes in the manufacturing and supply of semiconductor products. Their product portfolio includes discrete, logic, analog, and mixed-signal semiconductor products. The company serves diverse applications in the consumer electronics, computing, communications, industrial, and automotive markets. Diodes Incorporated is known for providing high-quality and cost-effective solutions to meet the needs of its customers worldwide.
Application
The 2N7002-7-F is a compact N-channel MOSFET widely used in various applications due to its low on-resistance and fast switching capabilities. It is commonly used in:
1. Switching Circuits: Acts as a switch for low-voltage applications.
2. Level Shifting: Interfaces between different voltage levels in circuits.
3. Load Drivers: Controls loads like LEDs and relays.
4. Signal Processing: Used in analog and digital signal processing.
5. Power Management: In battery-operated devices for efficient power control.
6. Consumer Electronics: Found in gadgets for efficient power usage.
Its versatility and reliability make it suitable for both commercial and industrial applications.
1. Switching Circuits: Acts as a switch for low-voltage applications.
2. Level Shifting: Interfaces between different voltage levels in circuits.
3. Load Drivers: Controls loads like LEDs and relays.
4. Signal Processing: Used in analog and digital signal processing.
5. Power Management: In battery-operated devices for efficient power control.
6. Consumer Electronics: Found in gadgets for efficient power usage.
Its versatility and reliability make it suitable for both commercial and industrial applications.
Package
The 2N7002-7-F is packaged in a SOT-23 (Small Outline Transistor) package. This is a small, surface-mount package commonly used for semiconductor devices, providing a compact form factor suitable for high-density circuit boards.
