사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 100mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.8 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 40 pF @ 10 V |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
개요
Description
The 2N7002E is a popular N-channel enhancement-mode MOSFET designed for low-voltage, low-current applications. Key features include:
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Handling: 115mA continuous drain current (ID).
- Low Threshold Voltage: Typically 1V (VGS(th)), making it suitable for 3.3V/5V logic circuits.
- Low On-Resistance: ~5Ω (RDS(on)) at VGS = 10V.
- Package: SOT-23 (small surface-mount).
Applications:
- Signal switching, load switching.
- Logic level shifting, GPIO interfacing.
- Low-power motor/relay drivers.
Advantages:
- Compact, cost-effective, and easy to use.
- Fast switching with minimal gate drive requirements.
Limitations:
- Not for high-power applications.
- Sensitive to static discharge (ESD protection recommended).
Ideal for battery-powered and portable electronics due to its efficiency and small footprint.
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Handling: 115mA continuous drain current (ID).
- Low Threshold Voltage: Typically 1V (VGS(th)), making it suitable for 3.3V/5V logic circuits.
- Low On-Resistance: ~5Ω (RDS(on)) at VGS = 10V.
- Package: SOT-23 (small surface-mount).
Applications:
- Signal switching, load switching.
- Logic level shifting, GPIO interfacing.
- Low-power motor/relay drivers.
Advantages:
- Compact, cost-effective, and easy to use.
- Fast switching with minimal gate drive requirements.
Limitations:
- Not for high-power applications.
- Sensitive to static discharge (ESD protection recommended).
Ideal for battery-powered and portable electronics due to its efficiency and small footprint.
Equivalent
Equivalent products to the 2N7002E (N-channel MOSFET) include:
- BS170 (higher VDS)
- 2N7000 (higher current rating)
- BSS138 (lower VGS(th), SMD)
- DMN2004DWK (dual MOSFET)
- NDS7002A (similar specs, SOT-23)
Check datasheets for exact compatibility in your circuit.
- BS170 (higher VDS)
- 2N7000 (higher current rating)
- BSS138 (lower VGS(th), SMD)
- DMN2004DWK (dual MOSFET)
- NDS7002A (similar specs, SOT-23)
Check datasheets for exact compatibility in your circuit.
Features
The 2N7002E is a popular N-channel enhancement-mode MOSFET with the following key features:
- Voltage Ratings:
- Drain-Source Voltage (VDS): 60V
- Gate-Source Voltage (VGS): ±20V
- Current Ratings:
- Continuous Drain Current (ID): 115mA
- Pulsed Drain Current (IDM): 800mA
- On-Resistance (RDS(on)):
- 5Ω (max) at VGS = 10V
- Threshold Voltage (VGS(th)):
- 0.8V to 3V (typ. 2.1V)
- Low Power Consumption:
- Gate Charge (Qg): 1.3nC (typ)
- Low Input Capacitance (Ciss): ~50pF
- Package: SOT-23 (small, surface-mount)
- Applications:
- Low-power switching, signal amplification, load switching in portable electronics.
Compact, efficient, and cost-effective for low-voltage, low-current applications.
- Voltage Ratings:
- Drain-Source Voltage (VDS): 60V
- Gate-Source Voltage (VGS): ±20V
- Current Ratings:
- Continuous Drain Current (ID): 115mA
- Pulsed Drain Current (IDM): 800mA
- On-Resistance (RDS(on)):
- 5Ω (max) at VGS = 10V
- Threshold Voltage (VGS(th)):
- 0.8V to 3V (typ. 2.1V)
- Low Power Consumption:
- Gate Charge (Qg): 1.3nC (typ)
- Low Input Capacitance (Ciss): ~50pF
- Package: SOT-23 (small, surface-mount)
- Applications:
- Low-power switching, signal amplification, load switching in portable electronics.
Compact, efficient, and cost-effective for low-voltage, low-current applications.
Pinout
The 2N7002E is a N-channel MOSFET with 3 pins (TO-92 or SOT-23 package):
1. Gate (G) – Controls the MOSFET's conductivity.
2. Drain (D) – Connects to the load (higher voltage side).
3. Source (S) – Connects to ground (lower voltage side).
Key Features:
- Low threshold voltage (~1-3V).
- 60V drain-source voltage (VDS).
- 115mA continuous drain current (ID).
- Used for low-power switching (e.g., logic-level circuits, signal control).
Concise and functional for quick reference.
1. Gate (G) – Controls the MOSFET's conductivity.
2. Drain (D) – Connects to the load (higher voltage side).
3. Source (S) – Connects to ground (lower voltage side).
Key Features:
- Low threshold voltage (~1-3V).
- 60V drain-source voltage (VDS).
- 115mA continuous drain current (ID).
- Used for low-power switching (e.g., logic-level circuits, signal control).
Concise and functional for quick reference.
Application
The 2N7002E is a small-signal N-channel MOSFET commonly used in:
1. Switching Circuits – Low-power load switching (e.g., relays, LEDs).
2. Logic Level Conversion – Shifting signals between 3.3V and 5V systems.
3. Signal Amplification – Pre-amplifiers or buffer stages.
4. Protection Circuits – Reverse polarity or overvoltage protection.
5. Embedded Systems – GPIO interfacing in microcontrollers (Arduino, Raspberry Pi).
Its low threshold voltage (~1V) and compact SOT-23 package make it ideal for space-constrained, low-power applications.
1. Switching Circuits – Low-power load switching (e.g., relays, LEDs).
2. Logic Level Conversion – Shifting signals between 3.3V and 5V systems.
3. Signal Amplification – Pre-amplifiers or buffer stages.
4. Protection Circuits – Reverse polarity or overvoltage protection.
5. Embedded Systems – GPIO interfacing in microcontrollers (Arduino, Raspberry Pi).
Its low threshold voltage (~1V) and compact SOT-23 package make it ideal for space-constrained, low-power applications.
