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2N7002W-7-F
+BOMMOSFET N-CH 60V 115MA SOT323
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제조업체다이오즈(주)
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제조업체 부품 #2N7002W-7-F
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데이터시트 2N7002W-7-F DataSheet
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패키지 SOT-323-3
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재고4502
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사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 115mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V |
| Rds On(Max) @ Id Vgs | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V |
| Power Dissipation (Max) | 200mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-323 |
개요
Description
Key specifications include:
- Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 60V.
- Current Rating: It can conduct a continuous drain current (I_D) of approximately 200mA.
- Package: Available in a compact SOT-323 package, suitable for space-constrained designs.
- R_DS(on): The on-resistance is typically low, around 1.2 ohms at a gate-source voltage (V_GS) of 10V, contributing to efficient operation.
The 2N7002W-7-F is ideal for use in digital circuits, signal processing, and as a general-purpose switching device due to its reliable performance and ease of use. It is widely utilized in automotive, industrial, and consumer electronics.
Equivalent
Features
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 115 mA.
2. Low On-Resistance: Features a low on-state resistance, typically around 5Ω, which helps in reducing power loss and improving efficiency.
3. Package: It comes in a compact SOT-323 (SC-70) package, making it suitable for space-constrained applications.
4. Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 0.8V to 2.5V, enabling it to be driven by low-voltage logic levels.
5. Fast Switching: Capable of high-speed switching thanks to its low gate charge, which enhances performance in high-frequency applications.
6. Applications: Commonly used in general-purpose switching, load switching, and level shifting in various consumer electronics.
These features make the 2N7002W-7-F a versatile choice for a wide range of electronic applications requiring efficient and compact switches.
Pinout
1. Gate (Pin 1): Controls the MOSFET's conductivity; when voltage is applied, it allows current to flow between the drain and source.
2. Source (Pin 2): The terminal through which current enters the MOSFET when it is in the "on" state.
3. Drain (Pin 3): The terminal through which current exits the MOSFET when it is in the "on" state.
The 2N7002W-7-F is often utilized in low-power switching applications due to its low on-state resistance and fast switching capabilities.
Manufacturer
Application
1. Switching Circuits: Useful in low-power switching applications.
2. Load Switching: Acts as a switch for low to moderate power loads.
3. Level Shifting: Translates voltage levels between different parts of a circuit.
4. Signal Amplification: Used in signal processing circuits for amplification.
5. Battery-Operated Devices: Ideal for portable electronics due to its low threshold voltage and power consumption.
6. Consumer Electronics: Widely used in devices like smartphones, tablets, and wearables.
These applications leverage its fast switching speed, low on-resistance, and compact size.