사양
| 속성 | 가치 |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tray |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 15 A |
| Voltage - Collector Emitter Breakdown(Max) | 230 V |
| Vce Saturation(Max) @ Ib Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff(Max) | 5µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 80 @ 1A, 5V |
| Power - Max | 130 W |
| Frequency - Transition | 30MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
