2SC5227A-4-TB-E

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2SC5227A-4-TB-E

+BOM

RF TRANS NPN 10V 7GHZ 3CP

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성 가치
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN
Voltage-CollectorEmitterBreakdown(Max) 10V
Frequency-Transition 7GHz
NoiseFigure(dBTyp@f) 1dB @ 1GHz
Gain 12dB
Power-Max 200mW
DCCurrentGain(hFE)(Min)@IcVce 90 @ 20mA, 5V
Current-Collector(Ic)(Max) 70mA
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

개요

Description

The 2SC5227A-4-TB-E is a silicon NPN epitaxial type transistor commonly used in electronic circuits for amplification and switching purposes. Key features of this transistor include its high collector current and voltage ratings, making it suitable for various applications such as audio amplification, signal processing, and power management in electronic devices.
This transistor is encapsulated in a compact package, allowing for easy integration into circuit boards. The 2SC5227A-4-TB-E typically offers a high gain bandwidth, low noise performance, and robust thermal stability, ensuring reliable operation in diverse environments. It is designed for use in consumer electronics, industrial applications, and other systems requiring efficient and reliable transistor performance.
The component is often selected for its balance of performance characteristics and cost-effectiveness, making it a popular choice among engineers and designers. For optimal application, it is important to consider the specific requirements of the circuit, such as biasing conditions and thermal management, to ensure proper function and longevity.

Equivalent

The 2SC5227A-4-TB-E is a NPN bipolar junction transistor commonly used for amplification and switching. Equivalent products would include transistors with similar specifications, such as the 2N3904 BC547, and 2SC945. When looking for equivalents, ensure they match the key parameters like voltage, current, and gain characteristics. Always consult datasheets to verify compatibility in your specific application.

Features

The 2SC5227A-4-TB-E is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Configuration: NPN type transistor with a standard TO-92 package, making it suitable for through-hole mounting.

2. Collector-Emitter Voltage (Vceo): It typically supports a maximum voltage of around 60V, allowing it to handle moderate power applications.
3. Collector Current (Ic): The maximum continuous current is generally around 150mA.
4. Power Dissipation: The transistor can dissipate about 500mW of power, making it suitable for low to medium power applications.
5. Gain (hFE): It offers a decent DC current gain, usually in the range of 160 to 320, providing effective amplification capabilities.
6. Frequency: Suitable for high-frequency applications, with a transition frequency (fT) typically around 150 MHz.
These features make the 2SC5227A-4-TB-E an effective choice for various electronic circuits requiring reliable switching and amplification. Always refer to the specific datasheet for exact specifications and ensure compatibility with your application.

Pinout

The 2SC5227A-4-TB-E is a NPN bipolar junction transistor commonly used for amplification and switching applications. It typically comes in a TO-92 package, which features three pins. The pin configuration is as follows:
1. Emitter (E): This pin is usually connected to the ground side of the circuit. It emits carriers into the base region.
2. Base (B): This pin is the control terminal that modulates the transistor's operation. Small input current to this pin allows larger current flow between the collector and emitter.
3. Collector (C): This pin is connected to the voltage supply and collects carriers from the base.
The transistor is designed for general-purpose amplification and switching applications, making it suitable for use in a wide range of electronic circuits. Specific electrical characteristics such as current gain, maximum current, and voltage ratings should be checked in the datasheet for accurate application.

Manufacturer

The 2SC5227A-4-TB-E is a transistor manufactured by ON Semiconductor. ON Semiconductor is a company that specializes in the design, development, and supply of a broad range of semiconductor components. These components are used in various electronic devices and applications, including automotive, industrial, consumer electronics, computing, and communications infrastructure. The company is known for providing energy-efficient innovations, intelligent power technologies, and industry-leading semiconductor solutions.

Application

The 2SC5227A-4-TB-E is an NPN bipolar junction transistor commonly used in various electronic applications. Its primary application areas include amplification and switching in consumer electronics, audio equipment, signal processing, and power management circuits. It is often utilized in audio amplifiers, radio frequency (RF) circuits, and as a switch in power supplies due to its ability to handle moderate power levels. The transistor's characteristics make it suitable for driving small motors and relays as well. Furthermore, it can be found in general-purpose electronic devices where reliable and efficient transistor functions are required.

Package

The package type for the 2SC5227A-4-TB-E is a TO-92, which is a standard through-hole package commonly used for transistors.

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