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AM29F400BT-55EF
+BOM-
제조업체인피니티 테크놀로지
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제조업체 부품 #AM29F400BT-55EF
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재고3571
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사양
| 속성 | 가치 |
| Package / Case | TSOP-48 |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Series | Am29F400B |
| Packaging | Tray |
| Brand | Infineon Technologies |
| Product Type | NOR Flash |
| Factory Pack Quantity | 96 |
| Subcategory | Memory & Data Storage |
| Mounting Type | SMD/SMT |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Moisture Sensitive | Yes |
| Supply Voltage - Max | 5.25 V |
| Supply Voltage - Min | 4.75 V |
| Memory Size | 4 Mbit |
| Interface Type | Parallel |
| Organization | 512 k x 8/256 k x 16 |
| Active Read Current - Max | 40 mA |
| Timing Type | Asynchronous |
| Data Bus Width | 8 bit/16 bit |
| Architecture | Sector |
| Memory Type | NOR |
| Speed | 55 ns |
개요
Description
The device operates on a single 3.0 to 3.6 V power supply, ensuring low power consumption. It supports both boot block and sector erase modes, allowing flexible memory management. The AM29F400BT-55EF offers a standard 32-pin TSOP (Thin Small Outline Package), facilitating easy integration into circuit designs.
Key features include fast programming and erasing capabilities, with the ability to erase a sector in approximately 0.5 seconds. Its compatibility with standard programming algorithms makes it user-friendly for developers. The chip is ideal for applications requiring non-volatile storage, such as firmware, data logging, and code storage.
Equivalent
Features
1. Memory Type: EEPROM (Electrically Erasable Programmable Read-Only Memory).
2. Access Time: Fast read access time of 55 ns, enabling quick data retrieval.
3. Interface: Parallel interface for easy integration with microcontrollers and other digital devices.
4. Voltage Supply: Operates typically at a 3.0V to 3.6V power supply.
5. Endurance: Supports up to 100,000 program/erase cycles, ensuring reliability for repeated use.
6. Data Retention: Retains data for up to 20 years, providing stability for long-term storage.
7. Sector Architecture: Features uniform sector architecture, offering flexibility in programming and erasing.
8. Package Options: Available in various packages, including TSOP and DIP, for versatile mounting options.
These features make the AM29F400BT-55EF suitable for embedded systems, telecommunications, and consumer electronics applications.
Pinout
Pin Count: 44 pins
Functions of Key Pins:
1. A0-A18: Address inputs used to select the memory location.
2. DQ0-DQ7: Data I/O pins for read/write operations.
3. CE (Chip Enable): Activates the device for read/write operations.
4. OE (Output Enable): Controls the output data buffer for read operations.
5. WE (Write Enable): Enables writing to the memory.
6. RESET: Resets the device to a known state.
7. VCC: Power supply pin.
8. GND: Ground reference pin.
This device is suitable for various applications requiring non-volatile memory, including code storage and data retention.
Manufacturer
The AM29F400BT-55EF is a 4 Megabit (512K x 8) Flash memory device, which falls under the category of non-volatile memory, widely used in various applications, including consumer electronics, automotive systems, and telecommunications. AMD's products are characterized by high performance, efficiency, and innovative design.
As a company, AMD focuses on advancing technology through research and development, continually pushing the boundaries of computing performance and efficiency to meet the demands of modern computing environments.
Application
1. Embedded Systems: For firmware storage in microcontrollers and other embedded devices.
2. Consumer Electronics: In products like set-top boxes, digital cameras, and printers.
3. Networking Equipment: For configuration and firmware in routers and switches.
4. Automotive Applications: In engine control units (ECUs) for storing critical software.
5. Industrial Automation: For program and data storage in programmable logic controllers (PLCs).
Its flexibility and reliability make it suitable for diverse applications requiring non-volatile memory.