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AONR21357

Name: AONR21357
Rating: 4.8 (15 reviews)

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MOSFET P-CH 30V 21A/34A 8DFN

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제조업체 부품 #AONR21357
데이터시트 AONR21357 DataSheet
패키지 VDFN-8
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain(Id) @ 25°C	21A (Ta), 34A (Tc)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V
Rds On(Max) @ Id Vgs	7.8mOhm @ 20A, 10V
Vgs(th)(Max) @ Id	2.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	70 nC @ 10 V
Vgs(Max)	±25V
Input Capacitance(Ciss)(Max) @ Vds	2830 pF @ 15 V
Power Dissipation (Max)	5W (Ta), 30W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN-EP (3x3)

개요

Equivalent

The AONR21357 is a dual N-channel MOSFET. Equivalent or similar products include:
- Infineon BSC093N15NS5
- ON Semiconductor NVTFS5C404NL
- Vishay SiA414DJ
- TI CSD18540Q5B
These alternatives offer comparable specs (voltage, current, RDS(on)). Verify pin compatibility and electrical characteristics for your specific application.

Features

The AONR21357 is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): Typically 1.8mΩ (at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK) for compact PCB mounting
- Gate-Source Voltage (VGS): ±20V (max)
- Low Gate Charge (Qg): Enhances switching efficiency
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.

Pinout

The AONR21357 is a dual N-channel MOSFET in a DFN-8 (3x3) package with 8 pins. Key functions include:
- Pins 1, 3, 6, 8: Drain (D) for both MOSFETs (internally connected).
- Pins 2, 4: Gate (G) for MOSFET 1 and MOSFET 2, respectively.
- Pins 5, 7: Source (S) for MOSFET 1 and MOSFET 2, respectively.
It features low on-resistance (RDS(on)) and is designed for high-efficiency power switching in applications like DC-DC converters, load switches, and battery management.

Manufacturer

The manufacturer of the AONR21357 is Alpha & Omega Semiconductor (AOS), a company specializing in power semiconductors and ICs. AOS designs and produces components for power management, including MOSFETs, diodes, and power ICs, serving industries like computing, consumer electronics, and automotive. The AONR21357 is likely a power MOSFET used in high-efficiency applications.
AOS is a global company headquartered in the U.S. with manufacturing facilities in Asia, known for innovation in power efficiency and compact designs. Their products are widely used in energy-sensitive applications.

Application

The AONR21357 is a high-performance N-channel MOSFET commonly used in:
1. Power Management – Efficient voltage regulation in DC-DC converters and power supplies.
2. Motor Control – Driving motors in automotive, industrial, and robotics applications.
3. Switching Circuits – Fast switching in inverters, load switches, and battery protection systems.
4. Automotive Electronics – Enhancing efficiency in electric vehicles (EVs) and ADAS.
5. Consumer Electronics – Power optimization in devices like laptops and smartphones.
Its low on-resistance and high current handling make it ideal for energy-efficient, high-power applications.

Package

The package type for AONR21357 is DFN-8 (Dual Flat No-Lead, 8-pin). This compact surface-mount package is designed for efficient thermal performance and space-saving PCB layouts. It typically measures around 3mm x 3mm with exposed pads for heat dissipation. Commonly used in power management or MOSFET applications. Confirm exact dimensions in the datasheet for your specific variant.