사양
| 속성 | 가치 |
| Supplier | Microchip Technology |
| Package | Tube |
| Series | POWER MOS 7® |
| ProductStatus | Obsolete |
| IGBTType | PT |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 56 A |
| Current-CollectorPulsed(Icm) | 65 A |
| Vce(on)(Max)@VgeIc | 2.7V @ 15V, 15A |
| Power-Max | 250 W |
| SwitchingEnergy | 130µJ (on), 121µJ (off) |
| InputType | Standard |
| GateCharge | 55 nC |
| Td(on/off)@25°C | 8ns/29ns |
| TestCondition | 400V, 15A, 5Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-220-3 |
