사양
| 속성 | 가치 |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gb (256M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
개요
Description
The AS4C256M16D3LB-12BIN is a high-performance, low-voltage DDR3 SDRAM memory module. Manufactured by Alliance Memory, it features a 256 Megabit x 16 configuration, making it suitable for applications requiring large data capacities. Operating at a clock speed of 1600 MHz (DDR3-1600), it delivers fast data transfer rates, making it ideal for use in computing and networking environments where speed and efficiency are crucial.
This component is designed for a 1.35V low-voltage operation, which helps reduce power consumption compared to standard DDR3 modules that operate at 1.5V. The "-12BIN" suffix typically indicates its specific speed grade and binning, ensuring it meets certain performance criteria.
The AS4C256M16D3LB-12BIN is compatible with a wide range of systems and is often used in applications such as servers, routers, and industrial equipment. Its design allows for efficient handling of high-bandwidth tasks, and it supports error correction and other features necessary for reliable operation in demanding environments.
This component is designed for a 1.35V low-voltage operation, which helps reduce power consumption compared to standard DDR3 modules that operate at 1.5V. The "-12BIN" suffix typically indicates its specific speed grade and binning, ensuring it meets certain performance criteria.
The AS4C256M16D3LB-12BIN is compatible with a wide range of systems and is often used in applications such as servers, routers, and industrial equipment. Its design allows for efficient handling of high-bandwidth tasks, and it supports error correction and other features necessary for reliable operation in demanding environments.
Equivalent
The AS4C256M16D3LB-12BIN is a 4Gb DDR3L SDRAM chip. Equivalent products include the following:
1. Micron MT41K256M16TW-107:P
2. Samsung K4B4G1646D-BCK0
3. SK Hynix H5TC4G63AFR-PBA
4. Nanya NT5CB256M16DP-DI
These alternatives offer similar storage capacity and performance specifications, making them suitable substitutes for applications requiring DDR3L memory chips. Always check for compatibility with your specific system requirements.
1. Micron MT41K256M16TW-107:P
2. Samsung K4B4G1646D-BCK0
3. SK Hynix H5TC4G63AFR-PBA
4. Nanya NT5CB256M16DP-DI
These alternatives offer similar storage capacity and performance specifications, making them suitable substitutes for applications requiring DDR3L memory chips. Always check for compatibility with your specific system requirements.
Features
The AS4C256M16D3LB-12BIN is a DRAM module featuring a 4Gbit capacity organized as 256M x 16 bits. Key characteristics include:
1. Speed and Latency: Operates at a clock speed of 1600 MHz (DDR3-1600) with a CAS latency of 12 cycles.
2. Voltage: Requires a supply voltage of 1.35V, making it an energy-efficient option.
3. Interface: Utilizes a 240-pin DDR3 interface, which is standard for DDR3 memory modules.
4. Temperature Range: Designed to operate within a temperature range suitable for both industrial and commercial applications.
5. Error Correction: Typically does not include ECC (Error-Correcting Code) - suitable for standard computing applications where error correction is not critical.
6. Package Type: Available in a 96-ball FBGA package.
7. Compliance: Conforms to JEDEC standards for DDR3 SDRAMs, ensuring compatibility with a wide range of systems.
This module is suitable for use in a variety of applications including computing, networking, and industrial systems where high-speed data processing and reliability are required.
1. Speed and Latency: Operates at a clock speed of 1600 MHz (DDR3-1600) with a CAS latency of 12 cycles.
2. Voltage: Requires a supply voltage of 1.35V, making it an energy-efficient option.
3. Interface: Utilizes a 240-pin DDR3 interface, which is standard for DDR3 memory modules.
4. Temperature Range: Designed to operate within a temperature range suitable for both industrial and commercial applications.
5. Error Correction: Typically does not include ECC (Error-Correcting Code) - suitable for standard computing applications where error correction is not critical.
6. Package Type: Available in a 96-ball FBGA package.
7. Compliance: Conforms to JEDEC standards for DDR3 SDRAMs, ensuring compatibility with a wide range of systems.
This module is suitable for use in a variety of applications including computing, networking, and industrial systems where high-speed data processing and reliability are required.
Manufacturer
The AS4C256M16D3LB-12BIN is manufactured by Alliance Memory, Inc. Alliance Memory is a company that specializes in providing legacy memory products, including DRAMs and SRAMs. They focus on supporting older technology that other mainstream manufacturers have phased out, catering to industries and applications where long-term availability of specific memory components is critical. Their product offerings include a variety of DRAM and SRAM solutions, making them a key player for businesses that require reliable and consistent memory supply over extended periods.
Application
The AS4C256M16D3LB-12BIN is a DDR3 SDRAM chip commonly used in applications requiring high-speed data processing and storage. Key areas include:
1. Computing Devices: Laptops, desktops, and servers for enhanced memory performance.
2. Networking Equipment: Routers and switches for efficient data handling and throughput.
3. Consumer Electronics: Gaming consoles and smart TVs demanding rapid data access.
4. Telecommunications: Base stations and other telecom infrastructure for reliable memory support.
5. Industrial Systems: Automation and control systems requiring robust memory solutions.
6. Embedded Systems: Various applications in automotive and IoT devices for improved processing capabilities.
These applications benefit from the chip's high bandwidth, low latency, and energy efficiency.
1. Computing Devices: Laptops, desktops, and servers for enhanced memory performance.
2. Networking Equipment: Routers and switches for efficient data handling and throughput.
3. Consumer Electronics: Gaming consoles and smart TVs demanding rapid data access.
4. Telecommunications: Base stations and other telecom infrastructure for reliable memory support.
5. Industrial Systems: Automation and control systems requiring robust memory solutions.
6. Embedded Systems: Various applications in automotive and IoT devices for improved processing capabilities.
These applications benefit from the chip's high bandwidth, low latency, and energy efficiency.
Package
The AS4C256M16D3LB-12BIN is a DRAM module, specifically a DDR3 SDRAM. It comes in a 96-ball Fine-Pitch Ball Grid Array (FBGA) package.