사양
| 속성 | 가치 |
| Supplier | Alliance Memory, Inc. |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 1.2 GHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 18 ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
개요
Description
AS4C512M8D4-83BIN is Alliance Memory’s 512‑Mbit, 8‑bit wide NAND Flash memory (AS4C512M8D4 family). It’s a parallel non-volatile storage device used in embedded systems and consumer electronics for firmware and data storage. The “512M” indicates the capacity, “8” = 8‑bit I/O, and “D4” is the device family/organization; “83BIN” is the package/revision code. It uses a standard NAND flash command interface and requires a flash controller or software layer to handle wear leveling, bad-block management, and error correction. The device supports page-level reads/writes and block erases and is designed for 3.3V operation (consult the datasheet for exact voltage, timing, and packaging details). Typical uses include firmware storage, data logging, and other non-volatile storage in microcontroller or processor-based systems. For precise electrical specs, timing parameters, endurance, temperature range, pinout, and package options, refer to the official Alliance Memory datasheet.
Features
Here are the typical features for AS4C512M8D4-83BIN (consult the datasheet for exact specs):
- 512 Mb total capacity (64 MB)
- x8 data width (8-bit I/O)
- Synchronous DRAM with DDR-like data transfers
- 4-bank organization
- Burst length options (e.g., BL4/BL8)
- Auto-refresh and self-refresh modes
- Low-power operation with 1.8V core and I/O (VDD/VDDQ)
- JEDEC-compatible timing with programmable CAS latency
- Page/burst access for higher bandwidth
- Suitable for mobile/low-power applications; available in compact packaging
Note: Exact speed grade, voltages, timing parameters, and packaging should be verified from the official datasheet.
- 512 Mb total capacity (64 MB)
- x8 data width (8-bit I/O)
- Synchronous DRAM with DDR-like data transfers
- 4-bank organization
- Burst length options (e.g., BL4/BL8)
- Auto-refresh and self-refresh modes
- Low-power operation with 1.8V core and I/O (VDD/VDDQ)
- JEDEC-compatible timing with programmable CAS latency
- Page/burst access for higher bandwidth
- Suitable for mobile/low-power applications; available in compact packaging
Note: Exact speed grade, voltages, timing parameters, and packaging should be verified from the official datasheet.
Pinout
Pin count: 54 pins (TSOP/Package variant BIN).
Function: 512-Mbit, x8 SDRAM (4-bank) device. It provides 8 data I/O lines (DQ0–DQ7), a 26‑bit address bus (A0–A25), bank selects BA0–BA1, and standard SDRAM controls (CS, RAS, CAS, WE, CKE, CK/CK#). Includes data‑mask (DQM) pins and the usual power/ground pins (Vcc, Vss) plus reference/vccq as applicable.
Function: 512-Mbit, x8 SDRAM (4-bank) device. It provides 8 data I/O lines (DQ0–DQ7), a 26‑bit address bus (A0–A25), bank selects BA0–BA1, and standard SDRAM controls (CS, RAS, CAS, WE, CKE, CK/CK#). Includes data‑mask (DQM) pins and the usual power/ground pins (Vcc, Vss) plus reference/vccq as applicable.
Manufacturer
- Manufacturer: Alliance Memory, Inc.
- What kind of company: A fabless semiconductor company that designs and markets memory products (DRAM, SRAM, Flash) and uses third-party foundries to manufacture its devices.
- What kind of company: A fabless semiconductor company that designs and markets memory products (DRAM, SRAM, Flash) and uses third-party foundries to manufacture its devices.
Application
AS4C512M8D4-83BIN is a 512‑Mbit x8 synchronous DRAM. Typical application areas include:
- Embedded and consumer electronics (set‑top boxes, Blu‑ray/DVD players, digital cameras, TVs)
- Networking/telecom equipment (routers, switches)
- Automotive electronics (infotainment, instrument clusters)
- Industrial control and automation
- FPGA/ASIC-based systems requiring external DRAM
(Refer to the datasheet for exact voltage, timing, and temperature specs.)
- Embedded and consumer electronics (set‑top boxes, Blu‑ray/DVD players, digital cameras, TVs)
- Networking/telecom equipment (routers, switches)
- Automotive electronics (infotainment, instrument clusters)
- Industrial control and automation
- FPGA/ASIC-based systems requiring external DRAM
(Refer to the datasheet for exact voltage, timing, and temperature specs.)
Package
TSOP II (Plastic), 54-pin surface-mount package used for the AS4C512M8D4 SDRAM.
