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AT25EU0011A-MAHN-T
+BOMIC FLASH 1MB SPI 85 MHZ 8UDFN
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제조업체리사 전자
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제조업체 부품 #AT25EU0011A-MAHN-T
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재고6487
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사양
| 속성 | 가치 |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Mbit |
| Memory Organization | 128K x 8 |
| Memory Interface | SPI - Quad I/O, QPI |
| Write Cycle Time - Word, Page | 8ms |
| Voltage - Supply | 1.65V ~ 3.6V |
| Mounting Type | Surface Mount |
| Package / Case | 8-UFDFN Exposed Pad |
| Supplier Device Package | 8-UDFN (2x3) |
| Base Product Number | AT25EU0011A |
| Clock Frequency | 85 MHz |
개요
Description
Key features include high endurance with a minimum of 100,000 erase/write cycles and data retention of over 100 years. The AT25EU0011A-MAHN-T is equipped with security features such as block protection and a lock-down mechanism to prevent accidental data overwriting. It also includes an industry-standard SOIC-8 package for easy integration into existing systems. Typical applications include consumer electronics, industrial devices, and IoT systems where reliable, non-volatile storage is crucial.
Equivalent
1. Microchip 25AA1024: 1Mb SPI EEPROM with similar specifications.
2. STMicroelectronics M95M01: 1Mb SPI EEPROM, offering comparable features.
3. ON Semiconductor CAT25M01: Another 1Mb SPI EEPROM variant.
These alternatives provide similar memory capacity and SPI interface features, suitable for applications requiring non-volatile memory storage. Always verify specific requirements and datasheet details for compatibility.
Features
The device is capable of both random and sequential read operations, providing flexibility in data access patterns. It also incorporates advanced write protection features, including a lockable ID page and software write protection for data integrity. The AT25EU0011A-MAHN-T is housed in an 8-lead UDFN package, making it suitable for space-constrained designs. Reliability is ensured with an endurance of up to 1 million write cycles and data retention of 100 years. This EEPROM is ideal for applications requiring robust performance and reliability in data logging, configuration storage, and more.
Pinout
1. CS (Chip Select): Activates the device when low, allowing communication.
2. SO (Serial Output): Outputs serial data from the EEPROM.
3. WP (Write Protect): Prevents write operations on the entire memory when low.
4. VSS (Ground): Ground reference for the device.
5. SI (Serial Input): Inputs serial data into the EEPROM.
6. SCK (Serial Clock): Provides the clock signal for data synchronization.
7. HOLD (Hold): Pauses any serial communication when low without resetting the clocking sequence.
8. VCC (Power Supply): Supplies power to the device.
These pin functions enable the EEPROM to perform read, write, and hold operations, and are essential for integrating the EEPROM into various electronic systems. Always refer to the official datasheet for detailed specifications and applications.