사양
| 속성 | 가치 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH |
| Memory Size | 64Mb (264 Bytes x 32K pages) |
| Memory Interface | SPI |
| Clock Frequency | 85 MHz |
| Write Cycle Time - Word Page | 8µs, 5ms |
| Voltage - Supply | 1.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
개요
Description
The AT45DB641E-MWHN-T is a high-performance, 64-megabit (8 megabytes) DataFlash memory device from Microchip Technology, designed for use in various digital storage applications. It utilizes a serial peripheral interface (SPI) to facilitate fast and efficient data transfer. The device offers a flexible memory architecture, with features like page erase, block erase, and sector erase, making it suitable for applications requiring frequent data updates.
This memory device operates at a wide voltage range from 2.3V to 3.6V, ensuring compatibility with various microcontrollers and processors. It supports rapid read and write operations, with a maximum clock frequency of 85 MHz, enhancing its performance in high-speed applications. The AT45DB641E-MWHN-T includes features like built-in error correction code (ECC) for data integrity and security, alongside deep power-down mode for reduced power consumption.
Its compact WSON (8x6mm) package makes it ideal for space-constrained applications, such as embedded systems, consumer electronics, and industrial automation. Overall, the AT45DB641E-MWHN-T provides reliable and efficient data storage solutions for modern electronic systems.
This memory device operates at a wide voltage range from 2.3V to 3.6V, ensuring compatibility with various microcontrollers and processors. It supports rapid read and write operations, with a maximum clock frequency of 85 MHz, enhancing its performance in high-speed applications. The AT45DB641E-MWHN-T includes features like built-in error correction code (ECC) for data integrity and security, alongside deep power-down mode for reduced power consumption.
Its compact WSON (8x6mm) package makes it ideal for space-constrained applications, such as embedded systems, consumer electronics, and industrial automation. Overall, the AT45DB641E-MWHN-T provides reliable and efficient data storage solutions for modern electronic systems.
Equivalent
The AT45DB641E-MWHN-T is a 64-megabit DataFlash memory chip. Equivalent products include:
1. Micron MT25QL064ABA - A 64Mb SPI NOR Flash memory.
2. Winbond W25Q64JV - A 64Mb Serial NOR Flash memory.
3. Cypress S25FL064L - A 64Mb Serial NOR Flash memory.
4. ISSI IS25WP064 - A 64Mb Serial Flash memory.
Ensure compatibility in terms of electrical characteristics, package type, and specific application requirements when considering alternatives.
1. Micron MT25QL064ABA - A 64Mb SPI NOR Flash memory.
2. Winbond W25Q64JV - A 64Mb Serial NOR Flash memory.
3. Cypress S25FL064L - A 64Mb Serial NOR Flash memory.
4. ISSI IS25WP064 - A 64Mb Serial Flash memory.
Ensure compatibility in terms of electrical characteristics, package type, and specific application requirements when considering alternatives.
Features
The AT45DB641E-MWHN-T is a 64-megabit, 2.5V or 3.3V DataFlash memory device from Microchip Technology. Key features include:
1. Capacity and Organization: 64 megabits of memory organized in 8,192 pages of 1,024 bytes each, facilitating efficient data storage and retrieval.
2. Dual and Quad SPI Interface: Supports both standard SPI as well as dual and quad SPI, enhancing data transfer rates and flexibility.
3. Rapid Data Transfer: Offers fast read capabilities with a maximum clock frequency of up to 85 MHz, allowing for quick access to stored data.
4. Enhanced Security: Includes features such as hardware and software data protection, individual sector locking, and a unique device ID for authentication.
5. Power Efficiency: Operates at low power, with a reduced active and standby current, making it ideal for battery-powered applications.
6. Industrial Grade: Suitable for industrial applications, with an operating temperature range from -40°C to +85°C.
This combination of features makes it a versatile choice for applications requiring reliable, high-capacity storage with enhanced data security and fast access times.
1. Capacity and Organization: 64 megabits of memory organized in 8,192 pages of 1,024 bytes each, facilitating efficient data storage and retrieval.
2. Dual and Quad SPI Interface: Supports both standard SPI as well as dual and quad SPI, enhancing data transfer rates and flexibility.
3. Rapid Data Transfer: Offers fast read capabilities with a maximum clock frequency of up to 85 MHz, allowing for quick access to stored data.
4. Enhanced Security: Includes features such as hardware and software data protection, individual sector locking, and a unique device ID for authentication.
5. Power Efficiency: Operates at low power, with a reduced active and standby current, making it ideal for battery-powered applications.
6. Industrial Grade: Suitable for industrial applications, with an operating temperature range from -40°C to +85°C.
This combination of features makes it a versatile choice for applications requiring reliable, high-capacity storage with enhanced data security and fast access times.
Pinout
The AT45DB641E-MWHN-T is a 64-megabit DataFlash memory, which is an advanced version of non-volatile memory. It is packaged typically in a SOIC (Small Outline Integrated Circuit) or other similar formats and operates with a standard SPI interface.
The device typically has an 8-pin configuration:
1. CS (Chip Select): Activates the device.
2. SCK (Serial Clock): Synchronizes data transfer.
3. MOSI (Master Out Slave In): Input data from the master.
4. MISO (Master In Slave Out): Output data to the master.
5. WP (Write Protect): Protects certain regions from being written to.
6. RESET: Resets the device.
7. VCC: Supply voltage.
8. GND: Ground connection.
The AT45DB641E is used in applications requiring high-speed storage, data logging, and firmware storage. Its SPI interface makes it suitable for embedded systems.
The device typically has an 8-pin configuration:
1. CS (Chip Select): Activates the device.
2. SCK (Serial Clock): Synchronizes data transfer.
3. MOSI (Master Out Slave In): Input data from the master.
4. MISO (Master In Slave Out): Output data to the master.
5. WP (Write Protect): Protects certain regions from being written to.
6. RESET: Resets the device.
7. VCC: Supply voltage.
8. GND: Ground connection.
The AT45DB641E is used in applications requiring high-speed storage, data logging, and firmware storage. Its SPI interface makes it suitable for embedded systems.
Manufacturer
The AT45DB641E-MWHN-T is manufactured by Microchip Technology Inc. Microchip Technology is an American company that specializes in the production of microcontroller, mixed-signal, analog, and Flash-IP integrated circuits. It serves a wide range of industries, including automotive, aerospace, consumer electronics, industrial, and telecommunications. Microchip's products are used in various applications such as embedded control systems, networking, wireless communications, and power management systems. Known for its innovation and commitment to quality, Microchip provides comprehensive solutions and support to its customers globally.
Application
The AT45DB641E-MWHN-T is a 64-megabit DataFlash memory chip suitable for a variety of applications. It is commonly used in areas such as embedded systems, consumer electronics, industrial automation, and telecommunications. The chip's fast read and write capabilities, along with its endurance and reliability, make it ideal for data logging, firmware storage, and boot code applications. It can be found in devices like digital cameras, set-top boxes, printers, and smart meters. Additionally, its small form factor and low power consumption make it a good choice for portable and battery-operated devices.
Package
The AT45DB641E-MWHN-T is a flash memory device in a 9x9 mm 8-contact VFBGA (Very Fine Ball Grid Array) package. This package type is designed for surface mount technology, offering a compact and efficient solution for integrating flash memory into electronic devices.
