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BAS116
+BOMDIODE GEN PURP 85V 215MA SOT23-3
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제조업체다이오즈(주)
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제조업체 부품 #BAS116
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데이터시트 BAS116 DataSheet
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재고18913
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사양
| 속성 | 가치 |
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Discontinued at Digi-Key |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 85 V |
| Current-AverageRectified(Io) | 215mA (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.25 V @ 150 mA |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 3 µs |
| Current-ReverseLeakage@Vr | 5 nA @ 75 V |
| Capacitance@VrF | 2pF @ 0V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
| SupplierDevicePackage | SOT-23-3 |
개요
Description
The development of BAS116 is driven by its potential therapeutic application in treating cancers where BRD4 is abnormally active, such as certain leukemias and lymphomas. By inhibiting BRD4, BAS116 disrupts the transcriptional programs that promote tumor cell growth and survival. This mechanism makes it a promising candidate for targeted cancer therapy.
Preclinical studies have demonstrated that BAS116 effectively reduces tumor growth in multiple cancer models. It also shows potential synergistic effects when used in combination with other anticancer agents. Ongoing research is focused on evaluating its efficacy and safety in clinical trials, aiming to establish BAS116 as a viable treatment option for cancers with aberrant BRD4 activity.
Equivalent
1. 1N4148WS
2. BAS19
3. BAS20
4. BAS21
5. BAV99
These alternatives generally have similar electrical characteristics and can be used in applications requiring fast switching and low forward voltage drop. Always verify specific parameters like reverse voltage, current rating, and package type to ensure compatibility with your application.
Features
1. Package Type: It is typically available in a SOT-23 package, offering a compact size suitable for surface-mount applications.
2. Reverse Voltage: It has a reverse voltage (V_R) rating of around 75 volts, allowing it to withstand moderate reverse voltages without breaking down.
3. Forward Current: The diode can handle a continuous forward current (I_F) of about 250 mA, making it suitable for low to moderate current applications.
4. Low Capacitance: The BAS116 features low capacitance, usually below 5 pF, which minimizes signal distortion and makes it suitable for high-frequency applications.
5. Fast Switching: It offers fast switching times, beneficial in high-speed circuits such as RF applications.
6. Low Leakage Current: The diode has a low reverse leakage current, making it efficient by reducing power loss when reverse-biased.
7. Temperature Range: It operates over a wide temperature range, typically from -65°C to +150°C, allowing it to perform reliably in various environmental conditions.
These features make the BAS116 versatile for use in clipping, clamping, protection, and switching applications.
Pinout
1. Pin 1 (Anode): This is the anode of the diode, where the current flows into the diode.
2. Pin 2 (No connection): This pin is typically not connected for most applications.
3. Pin 3 (Cathode): This is the cathode of the diode, where the current flows out of the diode.
The BAS116 is used for high-speed switching due to its low capacitance and fast recovery time, making it suitable for RF, digital, and analog applications. It is often used in signal diode functions such as clamping, protection, and high-speed rectification.