사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 30 V |
| Current-AverageRectified(Io) | 200mA (DC) |
| Voltage-Forward(Vf)(Max)@If | 800 mV @ 100 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| ReverseRecoveryTime(trr) | 5 ns |
| Current-ReverseLeakage@Vr | 2 µA @ 25 V |
| Capacitance@VrF | 10pF @ 1V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | SC-79, SOD-523 |
| SupplierDevicePackage | SOD-523 |
개요
Description
The BAT54XV2T1G is a Schottky barrier diode designed for general-purpose and high-speed switching applications. Manufactured by ON Semiconductor, it offers a low forward voltage drop and fast switching capabilities, making it ideal for use in power management, signal rectification, and voltage clamping. The device is encapsulated in a compact SOD-523 package, which is suitable for space-constrained designs.
Key features of the BAT54XV2T1G include a low forward voltage drop, which minimizes power loss and improves efficiency in circuits, and a high-speed switching response, which is beneficial for applications requiring rapid signal processing. The diode is capable of handling a peak repetitive reverse voltage of 30V and a continuous forward current of 200mA, catering to a wide range of electronic applications.
Its compact size and efficient performance make it particularly useful in portable and battery-operated devices. The BAT54XV2T1G is widely used in consumer electronics, communication devices, and computing equipment, among others, where space-saving and efficient power management are crucial.
Key features of the BAT54XV2T1G include a low forward voltage drop, which minimizes power loss and improves efficiency in circuits, and a high-speed switching response, which is beneficial for applications requiring rapid signal processing. The diode is capable of handling a peak repetitive reverse voltage of 30V and a continuous forward current of 200mA, catering to a wide range of electronic applications.
Its compact size and efficient performance make it particularly useful in portable and battery-operated devices. The BAT54XV2T1G is widely used in consumer electronics, communication devices, and computing equipment, among others, where space-saving and efficient power management are crucial.
Equivalent
The BAT54XV2T1G is a Schottky diode. Equivalent products include:
1. NXP Semiconductor's PMEG2005EH
2. Diodes Incorporated's SDM0230C-7
3. Vishay's BAT54-7-F
4. ON Semiconductor's BAS40-04LT1G
5. Fairchild Semiconductor's BAS40-04
Ensure compatibility by checking the datasheets for specific electrical and thermal characteristics, as slight variations may exist.
1. NXP Semiconductor's PMEG2005EH
2. Diodes Incorporated's SDM0230C-7
3. Vishay's BAT54-7-F
4. ON Semiconductor's BAS40-04LT1G
5. Fairchild Semiconductor's BAS40-04
Ensure compatibility by checking the datasheets for specific electrical and thermal characteristics, as slight variations may exist.
Features
The BAT54XV2T1G is a Schottky Barrier Diode with key features that include:
1. Low Forward Voltage Drop: This feature allows for efficient operation in applications requiring minimal power loss.
2. Fast Switching Speed: Ensures quick response times, making it suitable for high-speed applications.
3. Low Capacitance: Contributes to improved performance in high-frequency circuits.
4. Compact SOT-523 Package: The small size is ideal for space-constrained designs, enhancing the versatility of its applications.
5. Low Reverse Leakage Current: Minimizes energy loss and improves the overall efficiency of the circuit.
6. Junction Temperature Range: Typically supports a wide range, allowing for operation in various environmental conditions.
These features make the BAT54XV2T1G suitable for applications in rectification, switching, and clamping in portable and battery-powered devices. Its design is particularly beneficial for radio frequency (RF) and high-speed digital circuits.
1. Low Forward Voltage Drop: This feature allows for efficient operation in applications requiring minimal power loss.
2. Fast Switching Speed: Ensures quick response times, making it suitable for high-speed applications.
3. Low Capacitance: Contributes to improved performance in high-frequency circuits.
4. Compact SOT-523 Package: The small size is ideal for space-constrained designs, enhancing the versatility of its applications.
5. Low Reverse Leakage Current: Minimizes energy loss and improves the overall efficiency of the circuit.
6. Junction Temperature Range: Typically supports a wide range, allowing for operation in various environmental conditions.
These features make the BAT54XV2T1G suitable for applications in rectification, switching, and clamping in portable and battery-powered devices. Its design is particularly beneficial for radio frequency (RF) and high-speed digital circuits.
Pinout
The BAT54XV2T1G is a Schottky barrier diode commonly used for high-speed switching applications. It typically comes in a SOT-23 package and has a pin count of 3. The functions of the pins are as follows:
1. Anode (Pin 1): This is the positive terminal of the diode, where current enters.
2. Cathode (Pin 2): This is the negative terminal of the diode, where current exits.
3. Cathode (Pin 3): This pin is internally connected to Pin 2, serving as an additional cathode connection.
The BAT54XV2T1G is utilized for its fast switching capabilities, low forward voltage drop, and high efficiency, making it suitable for use in applications such as voltage clamping, rectification, and protection circuits.
1. Anode (Pin 1): This is the positive terminal of the diode, where current enters.
2. Cathode (Pin 2): This is the negative terminal of the diode, where current exits.
3. Cathode (Pin 3): This pin is internally connected to Pin 2, serving as an additional cathode connection.
The BAT54XV2T1G is utilized for its fast switching capabilities, low forward voltage drop, and high efficiency, making it suitable for use in applications such as voltage clamping, rectification, and protection circuits.
Manufacturer
The BAT54XV2T1G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a semiconductor manufacturing company that focuses on providing intelligent technology solutions, including power management, sensing, and connectivity solutions. The company caters to various sectors such as automotive, industrial, and communication, aiming to improve energy efficiency and address environmental challenges. Onsemi is recognized for its comprehensive portfolio of products that support the advancement of electronics and facilitate the development of smart and sustainable technologies.
Application
The BAT54XV2T1G is a Schottky barrier diode commonly used in various applications due to its low forward voltage drop and fast switching capabilities. Key application areas include:
1. Power Management: Used in power rectification and voltage clamping.
2. Signal Processing: Functions as a high-speed switching diode in RF and microwave circuits.
3. Protection Circuits: Acts as a safeguard against voltage spikes in sensitive electronic components.
4. DC-DC Converters: Enhances efficiency in converters by reducing power loss.
5. Reverse Polarity Protection: Prevents damage in circuits due to incorrect power supply connections.
These characteristics make it suitable for use in consumer electronics, automotive, and communication devices.
1. Power Management: Used in power rectification and voltage clamping.
2. Signal Processing: Functions as a high-speed switching diode in RF and microwave circuits.
3. Protection Circuits: Acts as a safeguard against voltage spikes in sensitive electronic components.
4. DC-DC Converters: Enhances efficiency in converters by reducing power loss.
5. Reverse Polarity Protection: Prevents damage in circuits due to incorrect power supply connections.
These characteristics make it suitable for use in consumer electronics, automotive, and communication devices.
Package
The BAT54XV2T1G is a Schottky barrier diode housed in a SOT-523 package. SOT-523 is a small, surface-mount package commonly used for discrete semiconductor components, offering compact size suitable for low-profile electronic applications.
