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BSC030P03NS3G
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제조업체인피니티 테크놀로지
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제조업체 부품 #BSC030P03NS3G
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사양
| 속성 | 가치 |
| Manufacturer | Infineon Technologies |
| Package | TDSON-8-EP(5x6) |
| OperatingTemperature | -55℃~+150℃ |
| RDS(on) | 3mΩ@6V,50A |
| DraintoSourceVoltage | 30V |
| Pd-PowerDissipation | 125W |
| Current-ContinuousDrain(Id) | 100A |
| ReverseTransferCapacitance(Crss@Vds) | 520pF@15V |
| InputCapacitance(Ciss@Vds) | 14nF@15V |
| Type | 1 piece P-channel |
| GateThresholdVoltage(Vgs(th)@Id) | 1.9V |
| GateCharge(Qg) | 186nC@10V |
개요
Description
Equivalent
Features
1. Low On-Resistance (RDS(on)): Ensures minimal power loss and heat generation during operation.
2. High Voltage Rating: Typically rated for 30V, making it suitable for a range of power applications.
3. High Current Handling: Can handle significant current levels, enabling it to drive higher loads.
4. Fast Switching Speed: Offers quick turn-on and turn-off times, ideal for high-frequency applications.
5. Low Gate Threshold Voltage: Allows for easy drive with lower voltage levels, enhancing compatibility with various control circuits.
6. Package Type: Available in a compact TO-220 or similar package, facilitating efficient thermal management.
7. Reliability: Built to withstand harsh conditions, making it suitable for automotive and industrial applications.
Overall, the BSC030P03NS3G is an efficient and reliable choice for power management and conversion in electronic designs.
Pinout
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is on.
3. Source (S): This terminal is connected to the ground or the return path for the current when the MOSFET is conducting.
The BSC030P03NS3G is designed for applications requiring efficient switching performance, featuring low on-resistance and fast switching times, making it suitable for power management and other high-efficiency applications.