이미지는 참조용입니다.

BSS123NH6327XTSA1

Name: BSS123NH6327XTSA1
Rating: 4.8 (15 reviews)

+BOM

MOSFET N-CH 100V 190MA SOT23-3

제조업체인피니티 테크놀로지
제조업체 부품 #BSS123NH6327XTSA1
데이터시트 BSS123NH6327XTSA1 DataSheet
패키지 PG-SOT23-3
재고3459

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

정품 보증

사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	OptiMOS™
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain(Id) @ 25°C	190mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V
Rds On(Max) @ Id Vgs	6Ohm @ 190mA, 10V
Vgs(th)(Max) @ Id	1.8V @ 13µA
Gate Charge(Qg)(Max) @ Vgs	0.9 nC @ 10 V
Vgs(Max)	±20V
Input Capacitance(Ciss)(Max) @ Vds	20.9 pF @ 25 V
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT23

개요

Description

The BSS123NH6327XTSA1 is an N-channel MOSFET from Infineon, designed for low-voltage, high-efficiency switching applications. Key features:
- 30V drain-source voltage (V_DS)
- 170mA continuous drain current (I_D)
- Low on-resistance (R_DS(on)) of 6Ω max at 4.5V gate drive.
- SOT-23 package, ideal for space-constrained designs.
Common uses include load switching, power management, and signal amplification in portable electronics, IoT devices, and battery-powered systems. Its low threshold voltage (V_GS(th)) ensures compatibility with logic-level signals (e.g., 3.3V/5V microcontrollers).
For detailed specs, refer to the Infineon datasheet.

Equivalent

Equivalent products to the BSS123NH6327XTSA1 (N-channel MOSFET, 100V, 170mA, SOT-23) include:
- DMN1019USN-7 (Diodes Inc)
- 2N7002DW (On Semiconductor)
- BS170 (Fairchild/ONSemi)
- NDS7002A (ON Semiconductor)
Check datasheets for exact specs like voltage, current, and package (SOT-23).

Features

The BSS123NH6327XTSA1 is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V (Drain-Source, V_DS)
- Current Rating: 170mA (Continuous Drain Current, I_D)
- Low On-Resistance: 6.5Ω (R_DS(on) at V_GS = 10V)
- Gate Threshold Voltage: 1.5V (V_GS(th))
- Low Power Dissipation: 250mW
- Fast Switching Speed
- SOT-23 Package (Compact & surface-mountable)
Ideal for low-power switching applications, signal amplification, and load control in portable electronics.

Pinout

The BSS123NH6327XTSA1 is a N-channel MOSFET with 3 pins (SOT-23 package).
Pin Functions:
1. Gate (G): Controls the switching.
2. Drain (D): Connects to the load (high-side).
3. Source (S): Ground/reference.
Key Features:
- 30V drain-source voltage.
- 170mA continuous drain current.
- Low threshold voltage for logic-level control.
Used in switching, amplification, and power management circuits.

Manufacturer

The BSS123NH6327XTSA1 is manufactured by Infineon Technologies, a leading German semiconductor company. Infineon specializes in power electronics, automotive systems, and IoT solutions, known for high-quality components like MOSFETs, microcontrollers, and sensors. The company serves industries such as automotive, industrial, and consumer electronics.
The part is a N-channel MOSFET from Infineon’s OptiMOS™ series, designed for efficient power management in compact applications.