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BSS138NH6327XTSA2
+BOMMOSFET N-CH 60V 230MA SOT23-3
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제조업체인피니티 테크놀로지
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제조업체 부품 #BSS138NH6327XTSA2
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패키지 PG-SOT23-3
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재고4345
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사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SIPMOS® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 230mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3.5Ohm @ 230mA, 10V |
| Vgs(th)(Max)@Id | 1.4V @ 26µA |
| GateCharge(Qg)(Max)@Vgs | 1.4 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 41 pF @ 25 V |
| PowerDissipation(Max) | 360mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-SOT23 |
개요
Description
Equivalent
1. 2N7002 - A widely used N-channel MOSFET with similar specifications.
2. BSH103 - Another MOSFET with comparable characteristics.
3. BS170 - Offers similar voltage and current ratings.
4. MMBT170 - SMD version of BS170 suitable for similar applications.
Always verify specific electrical characteristics and packaging requirements to ensure compatibility.
Features
1. Type: N-channel enhancement mode MOSFET.
2. Package: Comes in a small SOT-23 surface-mount package.
3. Voltage Rating: Maximum drain-source voltage (V_DS) of 50V.
4. Current Rating: Continuous drain current (I_D) of approximately 0.22A (220mA) at 25°C.
5. R_DS(on): Low on-resistance, typically around 3.5 ohms at a V_GS of 10V.
6. Gate Threshold Voltage: Typically around 1-2V for switching on/off.
7. Applications: Suitable for low-power switching applications, signal processing, and level shifting.
8. Temperature Range: Operates within a wide temperature range, generally from -55°C to +150°C.
9. Efficiency: Low gate charge and capacitance enhance its efficiency in switching applications.
10. RoHS Compliant: Environmentally friendly and compliant with Restriction of Hazardous Substances standards.
These features make the BSS138NH6327XTSA2 a versatile choice for designers in compact and efficient circuit designs.
Pinout
1. Gate (G) - This pin controls the MOSFET's conductivity. Applying a positive voltage to the gate relative to the source allows current to flow between the drain and source.
2. Drain (D) - This is the terminal where the current flows out of the MOSFET. It's connected to the higher voltage side in the circuit when the MOSFET is on.
3. Source (S) - This is the terminal where current enters the MOSFET. It's connected to the lower voltage side in the circuit.
The BSS138N is often used in low-power switching applications due to its low on-resistance and ability to handle small currents efficiently.
Manufacturer
Application
1. Switching Circuits: Used for turning on and off electronic loads.
2. Level Shifting: Facilitates interfacing between components with different voltage levels.
3. Signal Amplification: Suitable for amplifying small analog signals in RF and audio circuits.
4. Load Drivers: Drives small loads such as LEDs and low-power motors.
5. Battery-Powered Devices: Due to its low power consumption, it is ideal for portable electronics.
6. Voltage Regulation: Utilized in power management circuits to regulate voltage.
These applications leverage its low on-resistance, fast switching speed, and compact package.