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BSS63LT1G
+BOMTRANS PNP 100V 0.1A SOT23-3
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제조업체온세미
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제조업체 부품 #BSS63LT1G
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데이터시트 BSS63LT1G DataSheet
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패키지 TO-236-3
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사양
| 속성 | 가치 |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 100 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 100 V |
| VceSaturation(Max)@IbIc | 250mV @ 2.5mA, 25mA |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 30 @ 25mA, 1V |
| Power-Max | 225 mW |
| Frequency-Transition | 95MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
개요
Description
Key specifications include:
- Voltage Rating: Typically around 20V.
- Current Rating: Typically up to 300mA.
- RDS(on): Low on-state resistance, which helps in reducing power loss.
The BSS63LT1G is housed in a small SOT-23 package, which is suitable for surface-mount technology, making it ideal for compact circuit designs. It is commonly used in applications like load switching, signal processing, and other low-power electronic circuits. Its small form factor and efficient performance make it an attractive choice for designers looking to optimize space and energy efficiency in electronic devices.
Equivalent
1. 2N7002 - A popular SMD N-channel MOSFET.
2. BSS138 - Known for small-signal switching applications.
3. PMV20XN - Offers similar characteristics in a compact package.
Always verify parameters like Vds, Id, Rds(on), and package type to ensure compatibility with your specific application.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of 50V.
3. Current Rating: The maximum continuous drain current (I_D) is usually around 115mA.
4. R_DS(on): It features a low on-state resistance, often around 6 ohms.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 0.8V to 2.1V.
6. Package: It is available in a small SOT-23 surface-mount package, making it suitable for compact circuit designs.
7. Applications: It is used in applications like load switching, signal processing, and small signal amplification.
8. Temperature Range: The operating temperature range is generally from -55°C to +150°C.
This MOSFET is valued for its efficiency and reliability in low-power applications. Always consult the datasheet for precise and detailed specification values.
Pinout
1. Pin 1 (Gate): This is the gate terminal, which controls the MOSFET's conductivity. A voltage applied to this pin allows current to flow between the drain and the source.
2. Pin 2 (Source): This is the source terminal, where the current enters the MOSFET. For an N-channel MOSFET like the BSS63LT1G, it is usually connected to a lower voltage.
3. Pin 3 (Drain): This is the drain terminal, where the current exits the MOSFET. It is typically connected to a higher voltage compared to the source.
These pins enable the BSS63LT1G to function as a switch or amplifier in electronic circuits, frequently used for low-power applications.
Manufacturer
Application
1. Switching Circuits: Used in low-voltage, low-current switching applications.
2. Amplifiers: Suitable for signal amplification due to its low on-resistance.
3. Load Switches: Ideal for controlling power to different circuit segments.
4. Battery-Operated Devices: Fits well in portable devices due to its small size and low power consumption.
5. DC-DC Converters: Utilized in power management systems for voltage regulation.
6. Level Shifters: Helps in interfacing different voltage levels between components.
These characteristics make the BSS63LT1G versatile for various consumer electronics and industrial applications.