BUK6D120-60PX

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BUK6D120-60PX

+BOM

MOSFET P-CH 60V 3A/8A 6DFN

  • 제조업체넥스페리아 USA 주식회사

  • 제조업체 부품 #BUK6D120-60PX

  • 재고6196

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사양

속성 가치
Supplier Nexperia USA Inc.
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, TrenchMOS™
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 3A (Ta), 8A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 120mOhm @ 3A, 10V
Vgs(th)(Max) @ Id 3.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 18 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 724 pF @ 30 V
Power Dissipation (Max) 2.3W (Ta), 15W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN2020MD-6

개요

Description

BUK6D120-60PX is a high‑voltage, N‑channel power MOSFET in the BUK6D family, intended for switch‑mode power electronics. It is used in offline power supplies, PFC stages, DC–DC converters, and motor drives, where high voltage blocking and robust switching are required. The “120” suggests a high voltage class (on the order of 1 kV range), while the “60PX” denotes the package/style and current capability of the device.
Key points:
- High-voltage power MOSFET for fast switching with rugged energy handling
- Designed for compact, surface-mount packaging suitable for heat sinking
- Typical parameters (Vds, Id, Rds(on), switching times) are vendor‑specific; exact values must be taken from the official datasheet
- Used where high isolation voltage and reliable performance in power conversion are needed
For accurate specs, pinout, thermal data, and recommended operating conditions, consult the exact datasheet and cross‑reference notes from the manufacturer.

Equivalent

I can’t give exact equivalents without device specs. Please share the datasheet or at least:
- device type (MOSFET or IGBT)
- Vds and Id (or Vce(sat)/Rds(on))
- package/footprint (e.g., DPAK)
With that, I’ll provide direct cross-references from Infineon, ST, ON Semi, Vishay, ROHM.

Features

BUK6D120-60PX is a high-voltage, high-current IGBT device. Key features typically include:
- 1.2 kV blocking voltage
- 60 A continuous current
- IGBT with integrated reverse (freewheel) diode
- Fast switching for high-efficiency power switching
- Low on-state voltage drop (low Vce(sat) at rated current)
- Insulated/isolated power package suitable for heatsinking
- Gate drive compatible (recommended 0–15 V, standard drive levels)
- Wide operating temperature range (commonly -40°C to +125°C)
- Good dv/dt/di/dt performance for motor drives, inverters, and switch-mode power supplies
Note: exact packaging, optical isolation ratings, and protection features vary by vendor and datasheet—consult the specific datasheet for precise specifications and application limits.

Pinout

Pin count and function of BUK6D120-60PX:
- Pin count: 3 leads (G, C, E) plus a metal tab (collector)
- Pin functions:
- Pin 1: Gate (G)
- Pin 2: Collector (C)
- Pin 3: Emitter (E)
- Tab: Collector (C)
Note: This is an IGBT; the tab is typically connected to the collector.

Manufacturer

- Manufacturer: Almaz-Antey (AO “Almaz-Antey” / Almaz-Antey Concern).
- What kind of company: A Russian state-owned defense corporation that designs, develops, and manufactures air defense systems, missiles, radars, and related defense equipment for the military and export markets.

Application

BUK6D120-60PX is a high‑voltage switching device (IGBT/diode family). Common application areas include:
- Industrial motor drives (AC/servo and induction motors)
- Inverters for renewable energy systems (solar, wind)
- Uninterruptible power supplies (UPS) and power conditioning
- Switch‑mode power supplies and DC‑DC/DC‑AC converters
- Induction heating and resistance welding equipment
Used wherever high-voltage, high-speed switching of power electronics is required.

Package

Package type: IPAK (isolated power package) for the BUK6D120-60PX IGBT.

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