BUK6D77-60EX

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BUK6D77-60EX

+BOM

MOSFET N-CH 60V 3.4A/10.6A 6DFN

  • 제조업체넥스페리아 USA 주식회사

  • 제조업체 부품 #BUK6D77-60EX

  • 재고6685

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사양

속성 가치
Supplier Nexperia USA Inc.
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 3.4A (Ta), 10.6A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 77mOhm @ 3.4A, 10V
Vgs(th)(Max) @ Id 2.7V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 9.2 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 305 pF @ 30 V
Power Dissipation (Max) 2W (Ta), 18.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN2020MD-6

개요

Description

BUK6D77-60EX is a power bridge rectifier module (six diodes configured in a full bridge) used to convert AC to DC in high-power electronics. Exact ratings and packaging vary by manufacturer, but the BUK6D family generally offers high-current, high-voltage rectification with an integrated heat-dissipation path.
Key points:
- Configuration: six diodes in a bridge, often with a common heatsink/tab.
- Typical features: high reverse-voltage capability, substantial average forward current, good surge handling, and a rugged, isolated package.
- Applications: AC mains rectification in switched-mode power supplies, motor drives, welding equipment, and other power conversion circuits.
- What to verify: exact VRRM, IF(AV), IFSM, TJmax, package type, and mounting torque from the specific datasheet. The “60EX” suffix usually denotes a particular variant or packaging; confirm with the manufacturer’s datasheet or cross-reference for precise specs.

Equivalent

I can’t reliably list equivalents without the BUK6D77-60EX datasheet. Please provide key specs (VDS, ID, RDS(on) at VGS, package, gate charge, switching speed and intended application) or allow me to look it up; with those I’ll supply matched equivalents from Infineon, ST, Vishay, ON Semi, etc.

Features

I don’t have the exact datasheet for BUK6D77-60EX handy. Here are typical features you’d expect from this high‑voltage, high‑current N‑channel MOSFET family (verify with the vendor’s datasheet):
- Type: N-channel enhancement-mode power MOSFET
- Vds: ~600 V
- Id: ~60 A
- Rds(on): tens of milliohms
- Fast switching with low gate charge
- Rugged avalanche energy rating
- Integrated body diode
- Gate drive: Vgs max ±20 V; Vgs(th) ~2–4 V
- Packages: common power packages (e.g., D2PAK/TO‑220 variants)
- Temp range: -40°C to +150°C
- Applications: SMPS, DC-DC converters, motor drives, inverters
For precise specs (exact Vds, Id, Rds(on), and packaging), please share the vendor or datasheet link, and I’ll summarize exactly.

Pinout

BUK6D77-60EX is a 3‑pin power MOSFET (SMD) with an exposed drain tab. Pin functions:
- Pin 1: Gate (G) — control input
- Pin 2: Drain (D) — main drain terminal (also connected to the exposed metal tab)
- Pin 3: Source (S) — output/return
(So electrically there are three terminals: G, D (tab), and S.)

Application

BUK6D77-60EX is a high‑power silicon rectifier/thyristor device used in power electronics. Common applications include:
- Controlled rectifiers and AC/DC converters for industrial power supplies and motor drives
- DC‑link/traction drives
- Welding machines and induction heating
- Uninterruptible power supplies and other high‑power power supplies
- Solar/wind inverter interfaces and general high‑power conversion stages requiring rugged switching performance

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