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BUK7Y21-40EX
+BOMMOSFET N-CH 40V 33A LFPAK56
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제조업체넥스페리아 USA 주식회사
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제조업체 부품 #BUK7Y21-40EX
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재고2324
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사양
| 속성 | 가치 |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 33A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 21mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 617 pF @ 25 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
개요
Description
BUK7Y21-40EX is a high‑power N‑channel IGBT (discrete switch) in the BUK7Y family, used for fast switching in power-electronic converters. It’s typically employed in motor drives, inverters, and switch-mode power supplies.
Key points to know:
- Voltage and current ratings (Vces, Ic) from the datasheet
- Vce(sat) and switching speeds (td(on)/td(off))
- Gate drive requirements (Vge, logic-level or standard drive)
- Thermal characteristics (RthJA, mounting method)
- Built‑in diode or anti-parallel diode behavior
- Package type (TO‑220, D²PAK, etc.) and mounting/heat sinking
Exact specs vary by vendor and package; please share the vendor or a datasheet link for precise values. I can summarize the exact electrical ratings, safe-operating-area, and thermal data once I have the official datasheet.
Key points to know:
- Voltage and current ratings (Vces, Ic) from the datasheet
- Vce(sat) and switching speeds (td(on)/td(off))
- Gate drive requirements (Vge, logic-level or standard drive)
- Thermal characteristics (RthJA, mounting method)
- Built‑in diode or anti-parallel diode behavior
- Package type (TO‑220, D²PAK, etc.) and mounting/heat sinking
Exact specs vary by vendor and package; please share the vendor or a datasheet link for precise values. I can summarize the exact electrical ratings, safe-operating-area, and thermal data once I have the official datasheet.
Equivalent
I can’t reliably list equivalents without the MOSFET specs. BUK7Y21-40EX is an N-channel MOSFET; please provide: Vds, Id, Rds(on) (max), package, and whether a logic-level gate is required. With those I’ll give precise cross references from major brands (Infineon, ST, Rohm, Vishay) and distributor part numbers.
Features
BUK7Y21-40EX is a 40 V N-channel enhancement-mode power MOSFET. Key features:
- Vds: 40 V
- Id: 21 A (continuous)
- Very low Rds(on) (milliohm range) for high-efficiency conduction
- Logic-level gate drive (fully on at typical 4.5–5 V)
- Fast switching with low gate charge
- Robust protection: avalanche energy rating and diode characteristics suitable for switching
- Wide use in DC-DC converters, motor drives, high-side/low-side switches
- RoHS-compliant, lead-free
- Package: surface-mount power package (D²PAK/TO-252 style) with good thermal performance
- Operating temp: up to ~150°C junction
Note: exact Rds(on), gate threshold, and packaging can vary by lot; consult the datasheet for precise numbers.
- Vds: 40 V
- Id: 21 A (continuous)
- Very low Rds(on) (milliohm range) for high-efficiency conduction
- Logic-level gate drive (fully on at typical 4.5–5 V)
- Fast switching with low gate charge
- Robust protection: avalanche energy rating and diode characteristics suitable for switching
- Wide use in DC-DC converters, motor drives, high-side/low-side switches
- RoHS-compliant, lead-free
- Package: surface-mount power package (D²PAK/TO-252 style) with good thermal performance
- Operating temp: up to ~150°C junction
Note: exact Rds(on), gate threshold, and packaging can vary by lot; consult the datasheet for precise numbers.
Pinout
- Pin count: 3 pins (Gate, Collector, Emitter) with an exposed tab usually tied to the Collector.
- Function: N-channel IGBT power switch used for high-voltage/current switching in power electronics; gate drives conduction between Collector and Emitter.
- Function: N-channel IGBT power switch used for high-voltage/current switching in power electronics; gate drives conduction between Collector and Emitter.
Manufacturer
Manufacturer: JSC Concern Almaz-Antey (Almaz-Antey) of Russia.
What kind of company: A state-owned defense contractor/holding company that designs, develops, and manufactures air-defense systems, missiles, radars, and related subsystems (including the Buk family).
What kind of company: A state-owned defense contractor/holding company that designs, develops, and manufactures air-defense systems, missiles, radars, and related subsystems (including the Buk family).
Application
BUK7Y21-40EX is a high-speed power semiconductor used in switching power electronics. Typical applications include:
- 3-phase motor drives (BLDC/AC motors), pumps and fans
- Switch-mode power supplies and DC-DC converters (consumer, telecom, industrial)
- Inverters for UPS/back‑up power and solar power systems
- Industrial automation and control drives
- Automotive power electronics for auxiliary power and DC/AC conversion in mid-range power modules
It is suited for compact, efficient high-frequency switching in mid-power applications.
- 3-phase motor drives (BLDC/AC motors), pumps and fans
- Switch-mode power supplies and DC-DC converters (consumer, telecom, industrial)
- Inverters for UPS/back‑up power and solar power systems
- Industrial automation and control drives
- Automotive power electronics for auxiliary power and DC/AC conversion in mid-range power modules
It is suited for compact, efficient high-frequency switching in mid-power applications.
Package
D²PAK (TO-263) package with an exposed pad (EP).
