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BUK7Y4R8-60EX
+BOMMOSFET N-CH 60V 100A LFPAK56
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제조업체넥스페리아 USA 주식회사
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제조업체 부품 #BUK7Y4R8-60EX
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재고5327
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사양
| 속성 | 가치 |
| Supplier | Nexperia USA Inc. |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.8mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 4V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 73.1 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5520 pF @ 25 V |
| PowerDissipation(Max) | 238W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | LFPAK56, Power-SO8 |
개요
Description
Key points
- Ratings: Vds ≈ 60 V; very low on-resistance (Rds(on) around a few milliohms), enabling low conduction losses.
- Applications: switching regulators (buck/boost), motor drivers, automotive/power electronics.
- Features: fast switching capability, good thermal performance, suitable for compact, high‑current designs.
- Packaging: surface-mount power package (typical for high-power dissipation; check exact package type in the datasheet).
- Drive: gate driven by a suitable gate voltage (often logic-level or higher, per datasheet); verify gate threshold, Rds(on) at your Vgs, Id, and SOA.
For precise electrical specs, thermal limits, and safe operating area, consult the official datasheet.
Features
- N-channel enhancement-mode MOSFET
- Vds: 60 V
- Rds(on): ~4.8 mΩ (typical)
- Id (continuous drain current): around 7 A
- Fast switching suitable for SMPS and switching power supplies
- Low gate charge for efficient drive
- Avalanche/rugged energy handling for protection against inductive loads
- Package: Power SMD (TO-252/DPAK-type with exposed pad)
- RoHS compliant; wide operating temperature range
Note: Exact figures (e.g., Rds(on), Id, gate threshold) vary by lot. Please consult the official datasheet for precise specifications and recommended operating conditions.
Pinout
Function: N-channel enhancement-mode power MOSFET (single device) used for high-power switching (commonly in buck/boost DC-DC converter stages; 60V class, ~4.8 mΩ Rds(on) as indicated by the part name).
Application
- Synchronous buck/boost DC-DC converters
- Motor drivers (BLDC, stepper)
- Automotive and industrial power electronics
- LED drivers
- Solar/inverter and energy-storage power stages
- UPS and telecom power supplies
Note: verify datasheet for exact ratings and packaging.