BUK9Y19-100E

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BUK9Y19-100E

+BOM

MOSFETs

  • 제조업체Nexperia

  • 제조업체 부품 #BUK9Y19-100E

  • 재고10138

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치

개요

Description

The BUK9Y19-100E is a 100V, 19A N-channel MOSFET from Nexperia, designed for high-efficiency power switching in applications like DC-DC converters, motor control, and load switching. Key features include:
- Low on-resistance (RDS(on)): Typically 9.5 mΩ at 10V (VGS), reducing conduction losses.
- Fast switching: Optimized for high-frequency operation.
- Robust design: Avalanche-rated and qualified for automotive (AEC-Q101) and industrial use.
- Compact package: Housed in a LFPAK56 (Power-SO8) for efficient thermal performance.
Ideal for 12V/24V systems, it balances performance with reliability in demanding environments.

Equivalent

Equivalent products to the BUK9Y19-100E (100V, 19A N-channel MOSFET) include:
- IRF3205 (55V, 110A) – lower voltage but higher current.
- STP80NF55-06 (55V, 80A) – similar use case.
- IRL1004 (40V, 130A) – lower voltage alternative.
- IPB90N04S4-03 (40V, 90A) – SMD alternative.
For closer matches, check Infineon’s OptiMOS™ series or Vishay’s SiR/SiHF series. Verify specs (voltage, current, RDS(on)) before substitution.

Features

The BUK9Y19-100E is a N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 19A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~2V)
- Robust Design: Avalanche energy rated, low gate charge
- Package: TO-220 (through-hole) for easy mounting
Ideal for DC-DC converters, motor control, and power switching in industrial/automotive systems.

Pinout

The BUK9Y19-100E is a 100V, 19mΩ N-channel MOSFET in a TO-263 (D²PAK) package.
- Pin Count: 3 pins (standard for TO-263).
- Pin Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage/current input (connected to tab).
3. Source (S) – Output/ground reference.
Key Features:
- 100V drain-source voltage (VDS).
- 19mΩ on-resistance (RDS(on)).
- High current handling (up to 120A pulsed).
- Logic-level gate drive (optimized for 4.5V VGS).
Commonly used in power switching, motor control, and DC-DC converters.

Package

The BUK9Y19-100E is a power MOSFET in a TO-263 (D²PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance with a metal tab for heat dissipation. It is commonly used in automotive and industrial systems for switching and amplification. The TO-263 package is robust, compact, and suitable for high-current applications.

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