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C3M0015065K

Name: C3M0015065K
Rating: 4.8 (15 reviews)

+BOM

SICFET N-CH 650V 120A TO247-4L

제조업체Wolfspeed, 주식회사.
제조업체 부품 #C3M0015065K
데이터시트 C3M0015065K DataSheet
패키지 TO-247-4
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사양

속성	가치
Package / Case	Tube
Series	C3M™
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain(Id) @ 25°C	120A (Tc)
Drive Voltage(Max Rds On Min Rds On)	15V
Rds On(Max) @ Id Vgs	21mOhm @ 55.8A, 15V
Vgs(th)(Max) @ Id	3.6V @ 15.5mA
Gate Charge(Qg)(Max) @ Vgs	188 nC @ 15 V
Vgs(Max)	+15V, -4V
Input Capacitance(Ciss)(Max) @ Vds	5011 pF @ 400 V
Power Dissipation (Max)	416W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L

개요

Equivalent

The C3M0015065K is a 650V SiC MOSFET from Wolfspeed. Equivalent products include:
- ROHM: SCT3017AL
- STMicroelectronics: SCTW35N65G2V
- Infineon: IMZ120R045M1
- ON Semiconductor: NTH4L015N065SC1
These alternatives offer similar voltage ratings and performance for power applications. Always verify datasheets for exact specifications.

Features

The C3M0015065K is a SiC MOSFET module by Wolfspeed, designed for high-power applications. Key features include:
- Voltage/Current Rating: 900V, 150A
- Low On-Resistance (RDS(on)): Typically 6.5 mΩ
- High-Temperature Operation: Up to 175°C
- Fast Switching: Optimized for efficiency in high-frequency circuits
- Low Gate Charge (Qg): Reduces switching losses
- Half-Bridge Configuration: Integrates two MOSFETs for compact designs
- SiC Technology: Enables higher efficiency, power density, and thermal performance vs. silicon-based modules
Ideal for EV inverters, industrial power supplies, and renewable energy systems.

Pinout

The C3M0015065K is a 650V, 15mΩ silicon carbide (SiC) MOSFET from Wolfspeed in a TO-247-4L package.
- Pin Count: 4 pins (standard TO-247-4L configuration).
- Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage power terminal.
3. Source (S) – Current return path.
4. Kelvin Source (K) – Improves switching performance by reducing gate-loop inductance.
Designed for high-efficiency power applications like EV chargers and solar inverters.

Manufacturer

The C3M0015065K is a silicon carbide (SiC) MOSFET manufactured by Wolfspeed, a leading company in semiconductor technology. Wolfspeed specializes in wide-bandgap semiconductors, particularly SiC and GaN (gallium nitride) devices, known for high efficiency and performance in power electronics.
Wolfspeed, formerly part of Cree Inc., became an independent company in 2021. It focuses on power and RF solutions for industries like electric vehicles, renewable energy, and industrial applications. The C3M0015065K is part of their C3M™ MOSFET series, designed for high-power, high-frequency applications.
In short: Wolfspeed is a key innovator in SiC technology, and the C3M0015065K is one of their high-performance power transistors.

Application

The C3M0015065K is a silicon carbide (SiC) MOSFET module, primarily used in high-efficiency power electronics. Key application areas include:
1. Electric Vehicles (EVs) – Inverters, onboard chargers, and DC-DC converters.
2. Renewable Energy – Solar inverters and wind power systems.
3. Industrial Power Supplies – High-frequency switching and motor drives.
4. Data Centers – Efficient power distribution and UPS systems.
5. Aerospace & Defense – High-reliability power management.
Its advantages include high voltage tolerance, low switching losses, and thermal stability, making it ideal for demanding environments.