이미지는 참조용입니다.
-
제조업체CRMICRO
-
제조업체 부품 #CRSS052N08N
-
데이터시트 CRSS052N08N DataSheet
-
재고9405
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Manufacturer | CRMICRO |
| Package / Case | TO-263 |
| Current - Continuous Drain(Id) | 120A |
| Pd - Power Dissipation | 174W |
| Drain to Source Voltage (Vdss) | 85V |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V |
| Type | 1 N-channel |
개요
Description
- Voltage Rating: 80V (suggested by "08N").
- Current Handling: Moderate to high (exact value depends on datasheet).
- Low RDS(on): Designed for efficient power switching with minimal conduction losses.
- Package: Possibly TO-252 (DPAK) or similar surface-mount package.
Common applications include power supplies, motor control, and DC-DC converters. For precise specifications (e.g., current rating, gate charge, thermal resistance), consult the manufacturer’s datasheet (e.g., from Infineon, ON Semiconductor, or other vendors).
Note: Verify the exact part number, as typos (e.g., "CRSS" vs. "CSR") can lead to incorrect identification.
Equivalent
- IRFB4227PbF (Infineon)
- IPP052N08N5 (Infineon)
- STP80NF08 (STMicroelectronics)
- FDP083N08B (ON Semiconductor)
These alternatives offer similar voltage (80V), current (50-80A), and low RDS(on) characteristics. Always verify datasheets for exact compatibility.
Features
- Voltage Rating: 80V
- Current Rating: 52A (continuous)
- Low On-Resistance (RDS(on)): 5.2mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-263 (D2PAK), suitable for high-power designs
- Gate Charge (Qg): Low (typ. 30nC), reducing switching losses
- Avalanche Energy Rated: Enhances reliability in rugged conditions
Ideal for DC-DC converters, motor control, and power management in automotive/industrial systems.
Pinout
- Pin Count: 3 (standard TO-252/DPAK package: Gate, Drain, Source)
- Function: Power switching in applications like motor control, power supplies, and DC-DC converters.
- Voltage Rating: 80V
- Current Rating: 52A (continuous)
- Low On-Resistance (RDS(on)): ~5.2mΩ (max at VGS=10V)
It is designed for high-efficiency, high-current applications.