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CY14V101LA-BA45XI
+BOMIC NVSRAM 1MBIT PARALLEL 48FBGA
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제조업체세프라스 반도체 회사
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제조업체 부품 #CY14V101LA-BA45XI
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패키지 PG-TFBGA-48
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재고1582
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Package / Case | Bulk,Tray,Tray |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 1Mb (128K x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
개요
Description
Key features of the CY14V101LA-BA45XI include a fast access time, typically around 45 nanoseconds, and a wide operating voltage range, which enhances its versatility across different systems. The device also supports unlimited read and write cycles like conventional SRAM and automatic data saving on power down, ensuring reliability and endurance.
The CY14V101LA-BA45XI is packaged for industrial use, often in a standard 8-pin SOIC, making it suitable for integration into a variety of circuit designs. Its robust data retention capabilities and quick data access make it a crucial component for applications demanding efficiency and reliability.
Equivalent
1. STMicroelectronics: M48Z128
2. Renesas Electronics: R1LV0416
3. Microchip Technology: 23LC1024 (volatile SRAM alternative with different specs)
Always verify compatibility in terms of pin configuration, speed, voltage, and package size before substituting.
Features
1. Non-Volatile Data Retention: Uses QuantumTrap technology to provide excellent data retention, ensuring that data is preserved even during power loss.
2. Fast Access Time: Offers a fast access time of 45 ns, enabling quick data retrieval.
3. Unlimited Read and Write Cycles: Supports an unlimited number of read and write cycles, enhancing its durability and reliability for frequent data operations.
4. Low Power Consumption: Operates at low power, making it suitable for battery-operated applications.
5. Wide Temperature Range: Functions effectively across an industrial temperature range from -40°C to +85°C, making it suitable for various environmental conditions.
6. Easy Integration: Compatible with standard SRAM pinouts, allowing for straightforward integration into existing systems without the need for additional components.
These features make the CY14V101LA-BA45XI ideal for applications requiring reliable, high-speed data storage with non-volatile capabilities.
Pinout
Key functions and features include:
1. Non-volatile Data Storage: Automatically stores data in non-volatile memory when power is lost, preserving it for over 20 years.
2. Fast Access: Offers fast access times typical of SRAM, ensuring quick read and write operations.
3. Infinite Read/Write Cycles: Unlike EEPROM and flash memory, nvSRAM supports an unlimited number of read and write cycles during normal operation.
4. Low Power Consumption: Operates with low power, making it suitable for battery-powered applications.
The 28 pins provide connections for power, ground, address inputs, data inputs/outputs, and control signals including chip enable (CE), write enable (WE), and output enable (OE). This combination of features makes the CY14V101LA suitable for applications requiring high-speed data access and non-volatility, such as industrial controls and automotive systems.
Manufacturer
Application
1. Industrial Automation: Used for data logging and storage of critical system parameters.
2. Medical Devices: Critical data retention for devices like infusion pumps and monitors.
3. Telecommunications: Ensures data preservation in switches and network equipment during power loss.
4. Energy Management: Utilized in smart meters for storing consumption data.
5. Automotive: Stores configuration settings and diagnostic information.
6. Aerospace: Retains essential flight data in navigation systems.
7. Consumer Electronics: Used in devices requiring fast access and data retention without power.