CY14V101LA-BA45XI

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CY14V101LA-BA45XI

+BOM

IC NVSRAM 1MBIT PARALLEL 48FBGA

  • 제조업체세프라스 반도체 회사

  • 제조업체 부품 #CY14V101LA-BA45XI

  • 패키지 PG-TFBGA-48

  • 재고1582

365 1일 품질 보증

7*24 영업 시간 서비스 보증

90-판매 후 1일 보증

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사양

속성 가치
Package / Case Bulk,Tray,Tray
Part Status Active
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 1Mb (128K x 8)
Memory Interface Parallel
Write Cycle Time - Word Page 45ns
Access Time 45 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

개요

Description

The CY14V101LA-BA45XI is a high-performance, non-volatile static random-access memory (nvSRAM) module designed for applications requiring data integrity and fast access times. It integrates 1 Mbit of nvSRAM with a non-volatile storage element, allowing it to retain data without power. This makes it particularly useful in environments where data preservation during power loss is critical, such as in industrial control systems, automotive applications, and energy management systems.
Key features of the CY14V101LA-BA45XI include a fast access time, typically around 45 nanoseconds, and a wide operating voltage range, which enhances its versatility across different systems. The device also supports unlimited read and write cycles like conventional SRAM and automatic data saving on power down, ensuring reliability and endurance.
The CY14V101LA-BA45XI is packaged for industrial use, often in a standard 8-pin SOIC, making it suitable for integration into a variety of circuit designs. Its robust data retention capabilities and quick data access make it a crucial component for applications demanding efficiency and reliability.

Equivalent

The CY14V101LA-BA45XI is a 1-Mbit (128K x 8) nvSRAM from Cypress Semiconductor. Equivalent products would typically be from manufacturers that offer similar nvSRAM solutions, such as:
1. STMicroelectronics: M48Z128
2. Renesas Electronics: R1LV0416
3. Microchip Technology: 23LC1024 (volatile SRAM alternative with different specs)
Always verify compatibility in terms of pin configuration, speed, voltage, and package size before substituting.

Features

The CY14V101LA-BA45XI is a high-performance 1-Mbit (128K x 8) non-volatile static RAM. It combines the fast read and write speed of RAM with the non-volatility of EEPROM. Key features include:
1. Non-Volatile Data Retention: Uses QuantumTrap technology to provide excellent data retention, ensuring that data is preserved even during power loss.
2. Fast Access Time: Offers a fast access time of 45 ns, enabling quick data retrieval.
3. Unlimited Read and Write Cycles: Supports an unlimited number of read and write cycles, enhancing its durability and reliability for frequent data operations.
4. Low Power Consumption: Operates at low power, making it suitable for battery-operated applications.
5. Wide Temperature Range: Functions effectively across an industrial temperature range from -40°C to +85°C, making it suitable for various environmental conditions.
6. Easy Integration: Compatible with standard SRAM pinouts, allowing for straightforward integration into existing systems without the need for additional components.
These features make the CY14V101LA-BA45XI ideal for applications requiring reliable, high-speed data storage with non-volatile capabilities.

Pinout

The CY14V101LA-BA45XI is a 1-Mbit (128K x 8) non-volatile static RAM (nvSRAM). It features a 28-pin small outline integrated circuit (SOIC) package. The nvSRAM integrates a non-volatile element with a standard SRAM, providing fast read and write access times while retaining data when power is lost.
Key functions and features include:
1. Non-volatile Data Storage: Automatically stores data in non-volatile memory when power is lost, preserving it for over 20 years.
2. Fast Access: Offers fast access times typical of SRAM, ensuring quick read and write operations.
3. Infinite Read/Write Cycles: Unlike EEPROM and flash memory, nvSRAM supports an unlimited number of read and write cycles during normal operation.
4. Low Power Consumption: Operates with low power, making it suitable for battery-powered applications.
The 28 pins provide connections for power, ground, address inputs, data inputs/outputs, and control signals including chip enable (CE), write enable (WE), and output enable (OE). This combination of features makes the CY14V101LA suitable for applications requiring high-speed data access and non-volatility, such as industrial controls and automotive systems.

Manufacturer

The CY14V101LA-BA45XI is manufactured by Cypress Semiconductor Corporation. Cypress Semiconductor is a company that specializes in the design and production of semiconductor products, including microcontrollers, memory chips, and programmable system-on-chip solutions. The company is known for its innovations in embedded systems and solutions, catering to various industries such as automotive, industrial, consumer electronics, and communications. Cypress Semiconductor has a reputation for developing high-performance, energy-efficient, and reliable semiconductor products. In 2020, Cypress Semiconductor was acquired by Infineon Technologies, a leading global semiconductor manufacturer. This acquisition expanded Infineon's product portfolio and strengthened its position in the global semiconductor market.

Application

The CY14V101LA-BA45XI is a non-volatile static RAM (nvSRAM) with real-time clock (RTC) functionality. Its application areas include:
1. Industrial Automation: Used for data logging and storage of critical system parameters.
2. Medical Devices: Critical data retention for devices like infusion pumps and monitors.
3. Telecommunications: Ensures data preservation in switches and network equipment during power loss.
4. Energy Management: Utilized in smart meters for storing consumption data.
5. Automotive: Stores configuration settings and diagnostic information.
6. Aerospace: Retains essential flight data in navigation systems.
7. Consumer Electronics: Used in devices requiring fast access and data retention without power.

Package

The CY14V101LA-BA45XI is a serial non-volatile static RAM (nvSRAM) device. It typically comes in a 48-pin thin small outline package (TSOP I). This package type enhances the device's applicability in various electronic products due to its compact size, making it suitable for space-constrained applications.

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