DRV5013AGQDBZR

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DRV5013AGQDBZR

+BOM

MAGNETIC SWITCH LATCH SOT23-3

  • 제조업체텍사스 인스트루먼트(주)

  • 제조업체 부품 #DRV5013AGQDBZR

  • 패키지 SOT-23-3

  • 재고3407

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사양

속성 가치
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Active
Function Latch
Technology Hall Effect
Polarization South Pole
Sensing Range 9mT Trip, -9mT Release
Test Condition -40°C ~ 125°C
Voltage - Supply 2.7V ~ 38V
Current - Supply (Max) 2.7mA (Typ)
Current - Output (Max) 30mA
Output Type Open Drain
Features Temperature Compensated
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3

개요

Description

The DRV5013AGQDBZR is a Hall effect sensor from Texas Instruments, designed for detecting magnetic fields. It is part of the DRV5013 family, which offers robust and reliable magnetic sensing solutions. The sensor is particularly useful in applications where detection of position, speed, or directional movement is necessary.
Key features of the DRV5013AGQDBZR include:
1. Sensitivity: It offers high sensitivity to magnetic fields, allowing it to detect small changes effectively.
2. Operating Voltage: The sensor operates over a wide voltage range, providing flexibility in various applications.
3. Output Type: It provides a digital output, which simplifies integration with microcontrollers and other digital systems.
4. Temperature Range: The device operates efficiently across a broad temperature range, ensuring reliability in diverse environments.
5. Package: The sensor is available in a compact SOT-23 package, making it suitable for space-constrained designs.
Overall, the DRV5013AGQDBZR is ideal for applications in consumer electronics, automotive systems, industrial automation, and more, where precise magnetic field detection is required.

Equivalent

The DRV5013AGQDBZR is a Hall effect sensor IC from Texas Instruments. Equivalent products include:
1. Allegro Microsystems A1101EUA-T
2. Melexis MLX90248
3. Honeywell SS41
4. Diodes Incorporated AH3364Q
These alternatives offer similar functionalities, such as magnetic field detection for use in various applications. Always consult the datasheets to ensure compatibility with your specific requirements.

Features

The DRV5013AGQDBZR is a robust Hall effect sensor designed for precise magnetic field detection. Key features include:
1. Digital Output: Provides a digital output signal indicating the presence of a magnetic field.
2. Omnipolar Sensitivity: Detects magnetic fields of either polarity, enhancing flexibility in various applications.
3. Wide Operating Voltage: Functions over a range of 2.5V to 38V, making it versatile for different power environments.
4. Low Power Consumption: Optimized for minimal power usage, suitable for battery-powered devices.
5. Robust Performance: Tolerant to temperature variations, with an operating range from -40°C to 125°C.
6. Fast Response Time: Offers quick response to magnetic field changes, useful for dynamic applications.
7. SOT-23 Package: Compact and easy to integrate into space-constrained designs.
These features make the DRV5013AGQDBZR ideal for position sensing, speed detection, and proximity sensing in automotive, industrial, and consumer applications.

Pinout

The DRV5013AGQDBZR is a Hall effect sensor from Texas Instruments. It typically comes in an SOT-23 package, which has a 3-pin configuration. The pin functions are as follows:
1. VCC (Pin 1): This is the power supply pin. It is used to provide the necessary voltage to power the sensor, typically ranging from 2.5V to 38V.
2. GND (Pin 2): This pin is the ground connection. It serves as the reference point for the sensor's electrical circuits and is connected to the negative side of the power supply.
3. OUT (Pin 3): This is the output pin. The sensor provides a digital output based on the magnetic field strength it detects. When the magnetic field is above a certain threshold, it typically outputs a low signal, and when below, a high signal.
The DRV5013 is designed for use in applications such as position and proximity sensing, and it provides a unipolar switching function.

Manufacturer

The DRV5013AGQDBZR is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and produces a wide range of electronic components and integrated circuits. TI is known for its innovation in analog and embedded processing, focusing on sectors such as automotive, industrial, personal electronics, communications equipment, and enterprise systems. The company develops products that are essential components in many electronic devices, enabling advancements in technology and contributing to efficient power management, processing, and connectivity solutions. With a strong emphasis on research and development, Texas Instruments is a leader in the semiconductor industry, providing solutions that enhance performance and efficiency across various applications.

Application

The DRV5013AGQDBZR is a Hall-effect sensor used primarily for detecting magnetic fields. Its applications include:
1. Position Sensing: It is used in automotive systems for detecting the position of doors, seats, and pedals.
2. Speed Detection: Applied in motors and wheels to measure rotational speed.
3. Proximity Sensing: Useful for electronic devices that require open/close detection, such as smartphones and laptops.
4. Current Sensing: Employed in power supplies and battery packs to detect current flow.
5. Consumer Electronics: Utilized in gadgets for button and switch functions.
Its robust design makes it suitable for harsh environments, including industrial applications.

Package

The DRV5013AGQDBZR is packaged in a SOT-23 (Small Outline Transistor) package, which is a small, surface-mount technology package.

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