사양
| 속성 | 가치 |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| Function | Omnipolar Switch |
| Technology | Hall Effect |
| Polarization | North Pole, South Pole |
| SensingRange | ±4.8mT Trip, ±0.5mT Release |
| TestCondition | 25°C |
| Voltage-Supply | 1.65V ~ 5.5V |
| Current-Supply(Max) | 1.8µA |
| Current-Output(Max) | 5mA |
| OutputType | Push-Pull |
| OperatingTemperature | -40°C ~ 85°C |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
개요
Description
The DRV5032FBDBZR is a digital Hall effect sensor from Texas Instruments, designed for contactless magnetic field detection. It features a unipolar switch, meaning it responds to a specific magnetic pole. This sensor is part of the DRV5032 series, known for low power consumption, making it suitable for battery-operated devices. It operates within a supply voltage range of 1.65V to 5.5V and typically consumes only 1.6 µA at 3.3V.
The DRV5032FBDBZR is sensitive to magnetic fields and has a typical magnetic sensitivity threshold of about 3.1 mT (milliTesla). It is available in a small SOT-23 package, which makes it suitable for compact applications. The sensor outputs a digital signal, which indicates the presence or absence of a magnetic field. This makes it ideal for applications like open-close detection in consumer electronics, position detection in industrial settings, and in automotive systems for gear shifters or door locks. Its robust performance over a wide temperature range enhances its reliability in various environments.
The DRV5032FBDBZR is sensitive to magnetic fields and has a typical magnetic sensitivity threshold of about 3.1 mT (milliTesla). It is available in a small SOT-23 package, which makes it suitable for compact applications. The sensor outputs a digital signal, which indicates the presence or absence of a magnetic field. This makes it ideal for applications like open-close detection in consumer electronics, position detection in industrial settings, and in automotive systems for gear shifters or door locks. Its robust performance over a wide temperature range enhances its reliability in various environments.
Equivalent
Equivalent products to the DRV5032FBDBZR, a low-power, digital-output Hall effect sensor, include:
1. Allegro A1101 - A unipolar Hall effect switch with similar features.
2. Melexis MLX92212 - A micropower Hall effect switch.
3. Infineon TLE4963-1M - A low-power, unipolar Hall switch.
Each of these alternatives offers comparable functionality in terms of low power consumption and digital output capabilities, making them suitable substitutes for the DRV5032FBDBZR in various applications.
1. Allegro A1101 - A unipolar Hall effect switch with similar features.
2. Melexis MLX92212 - A micropower Hall effect switch.
3. Infineon TLE4963-1M - A low-power, unipolar Hall switch.
Each of these alternatives offers comparable functionality in terms of low power consumption and digital output capabilities, making them suitable substitutes for the DRV5032FBDBZR in various applications.
Features
The DRV5032FBDBZR is a low-power Hall effect sensor designed for magnetic field detection. Key features include:
1. Low Power Consumption: It operates with minimal power, making it suitable for battery-powered applications.
2. Wide Operating Voltage: Supports a supply voltage range from 1.65 V to 5.5 V, allowing flexibility in various applications.
3. Omnipolar Detection: Capable of detecting both north and south magnetic poles, providing ease of use.
4. High Sensitivity: It features a magnetic sensitivity of 1.1 mT for efficient detection of weak magnetic fields.
5. Stable Performance: Offers a stable temperature range from -40°C to 85°C, ensuring reliable performance in different environments.
6. Fast Response Time: Offers quick response to magnetic field changes, ideal for fast-switching applications.
7. Small Package Size: Available in compact SOT-23 packages, saving space in design layouts.
8. Built-in Pull-Up Resistor: Simplifies external circuit design, reducing component count.
These features make the DRV5032FBDBZR suitable for applications like contactless switches, smart meters, and proximity sensing.
1. Low Power Consumption: It operates with minimal power, making it suitable for battery-powered applications.
2. Wide Operating Voltage: Supports a supply voltage range from 1.65 V to 5.5 V, allowing flexibility in various applications.
3. Omnipolar Detection: Capable of detecting both north and south magnetic poles, providing ease of use.
4. High Sensitivity: It features a magnetic sensitivity of 1.1 mT for efficient detection of weak magnetic fields.
5. Stable Performance: Offers a stable temperature range from -40°C to 85°C, ensuring reliable performance in different environments.
6. Fast Response Time: Offers quick response to magnetic field changes, ideal for fast-switching applications.
7. Small Package Size: Available in compact SOT-23 packages, saving space in design layouts.
8. Built-in Pull-Up Resistor: Simplifies external circuit design, reducing component count.
These features make the DRV5032FBDBZR suitable for applications like contactless switches, smart meters, and proximity sensing.
Pinout
The DRV5032FBDBZR is a magnetic Hall effect sensor IC from Texas Instruments. It comes in a 3-pin SOT-23 package. The primary function of this sensor is to detect the presence or absence of a magnetic field, providing a digital output based on the magnetic flux density. The pin count and their typical functions are as follows:
1. Pin 1 (VCC): This is the power supply pin where the operating voltage is applied to power the sensor.
2. Pin 2 (GND): This is the ground pin, providing a common ground reference for the device.
3. Pin 3 (OUT): This is the output pin, which delivers a digital signal indicating the presence of a magnetic field. The output is typically high or low depending on the magnetic field strength relative to the sensor’s threshold levels.
The DRV5032FBDBZR is commonly used in applications such as position sensing, lid detection, and speed sensing due to its low power consumption and high sensitivity.
1. Pin 1 (VCC): This is the power supply pin where the operating voltage is applied to power the sensor.
2. Pin 2 (GND): This is the ground pin, providing a common ground reference for the device.
3. Pin 3 (OUT): This is the output pin, which delivers a digital signal indicating the presence of a magnetic field. The output is typically high or low depending on the magnetic field strength relative to the sensor’s threshold levels.
The DRV5032FBDBZR is commonly used in applications such as position sensing, lid detection, and speed sensing due to its low power consumption and high sensitivity.
Manufacturer
The DRV5032FBDBZR is manufactured by Texas Instruments. Texas Instruments, commonly referred to as TI, is a well-known American technology company that designs and manufactures semiconductors and various integrated circuits. It is one of the largest semiconductor companies in the world, providing components for a wide range of electronics applications. TI's products include analog chips and embedded processors, which are integral to electronics systems across industries such as automotive, industrial, consumer electronics, and communications equipment. The company is headquartered in Dallas, Texas, and has a significant global presence.
Application
The DRV5032FBDBZR is a Hall effect switch sensor that is commonly used in applications such as position detection, proximity sensing, and speed detection. It is ideal for battery-operated devices due to its low power consumption. Typical application areas include electronic locks, consumer electronics like smartphones and laptops for lid position detection, industrial equipment for limit switching, and automotive systems for position sensing. Its compact size and reliability make it suitable for integration into a wide range of devices where space and power efficiency are critical.
Package
The DRV5032FBDBZR is available in a SOT-23 (DBZ) package. The SOT-23 is a small outline transistor package commonly used for surface-mount devices.
