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EPC2218
+BOMGANFET N-CH 100V DIE
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제조업체몰드 캐스트 사라지기
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제조업체 부품 #EPC2218
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재고9452
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사양
| 속성 | 가치 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 13.6 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 50 V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
EPC2218 is a product code from Efficient Power Conversion (EPC) for a GaN transistor (an enhancement‑mode GaN FET) used in high‑frequency, high‑efficiency switching power designs. It’s part of EPC’s GaN FET family intended to replace silicon MOSFETs in DC‑DC converters, enabling higher switching speeds and smaller, lighter power supplies.
Typical use cases: point‑of‑load regulators and other high‑frequency power stages in buck/boost converters or other switching topologies.
Key advantages: very low gate charge and low Rds(on) relative to comparable Si parts, allowing low‑loss operation at high frequencies. This comes with the need for careful gate driving, dv/dt management, and good layout to control EMI.
What you’ll need: a suitable gate driver and the EPC datasheet/app notes for exact ratings, package details, and recommended circuits.
If you meant a different EPC2218 (kit/board), please share the context and I’ll tailor the intro.
Typical use cases: point‑of‑load regulators and other high‑frequency power stages in buck/boost converters or other switching topologies.
Key advantages: very low gate charge and low Rds(on) relative to comparable Si parts, allowing low‑loss operation at high frequencies. This comes with the need for careful gate driving, dv/dt management, and good layout to control EMI.
What you’ll need: a suitable gate driver and the EPC datasheet/app notes for exact ratings, package details, and recommended circuits.
If you meant a different EPC2218 (kit/board), please share the context and I’ll tailor the intro.
Features
Here are typical features of the EPC2218 GaN FET (Efficient Power Conversion):
- 650 V GaN-on-Si enhancement-mode transistor
- Very low on-resistance and low gate drive current (low Qg)
- Ultra-fast switching (nanosecond-scale rise/fall times)
- No reverse-recovery losses (improved efficiency)
- Very low parasitic capacitances, enabling compact, high-frequency designs
- High dv/dt/di/dt tolerance for robust switching
- Small, surface-mount package with RoHS compliance
- Suitable for high-frequency power supplies, flyback, LLC, DC-DC converters, and motor-drive topologies
Note: exact Rds(on), Qg, and package details vary by device revision; check the datasheet for precise specifications.
- 650 V GaN-on-Si enhancement-mode transistor
- Very low on-resistance and low gate drive current (low Qg)
- Ultra-fast switching (nanosecond-scale rise/fall times)
- No reverse-recovery losses (improved efficiency)
- Very low parasitic capacitances, enabling compact, high-frequency designs
- High dv/dt/di/dt tolerance for robust switching
- Small, surface-mount package with RoHS compliance
- Suitable for high-frequency power supplies, flyback, LLC, DC-DC converters, and motor-drive topologies
Note: exact Rds(on), Qg, and package details vary by device revision; check the datasheet for precise specifications.
Pinout
There are multiple EP C2218 parts from different manufacturers (e.g., GaN devices from Efficient Power Conversion vs. other EPC-designated components). Pin count and function vary by variant. Please supply the manufacturer or a datasheet link for the exact EPC2218 you mean, and I’ll give the precise pin count and pin functions.
Manufacturer
- Manufacturer: Efficient Power Conversion (EPC) — the Efficient Power Conversion Corporation.
- What kind of company: A fabless semiconductor company that designs and sells gallium nitride (GaN) power transistors and related switching devices for high-efficiency power electronics.
- What kind of company: A fabless semiconductor company that designs and sells gallium nitride (GaN) power transistors and related switching devices for high-efficiency power electronics.
Application
EPC2218 is a GaN FET suited for fast, high-efficiency switching. Typical application areas include:
- High-frequency, high-efficiency switch-mode power supplies (SMPS)
- Point-of-load DC-DC regulators for CPUs/GPUs, data centers, and telecom gear
- Fast chargers and USB-C/PD adapters
- Automotive power electronics and EV/charging front-end converters
- Renewable energy interfaces and energy-storage systems (inverters, UPS)
- Industrial power supplies and test instrumentation requiring compact, efficient power conversion
Note: designed for high-speed switching with small size and high efficiency.
- High-frequency, high-efficiency switch-mode power supplies (SMPS)
- Point-of-load DC-DC regulators for CPUs/GPUs, data centers, and telecom gear
- Fast chargers and USB-C/PD adapters
- Automotive power electronics and EV/charging front-end converters
- Renewable energy interfaces and energy-storage systems (inverters, UPS)
- Industrial power supplies and test instrumentation requiring compact, efficient power conversion
Note: designed for high-speed switching with small size and high efficiency.
Package
EPC2218 uses an 8-pin QFN package with an exposed pad (about 3x3 mm).
