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FCPF11N65
+BOMMOSFET N-CH 650V 11A TO220F
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제조업체온세미
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제조업체 부품 #FCPF11N65
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package / Case | Tube |
| Series | SuperFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Tc) |
| Rds On(Max) @ Id Vgs | 380mOhm @ 5.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance(Ciss)(Max) @ Vds | 1490 pF @ 25 V |
| Power Dissipation (Max) | 36W (Tc) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
개요
Description
I can’t locate a standard reference for “FCPF11N65.” Could you share context or a link (industry, product family, datasheet)? Once I know the type, I can give a precise intro.
If it’s a hardware component (likely a power device):
- FCPF11N65 is assumed to be a high-voltage N-channel switching device used in power electronics (SMPS, DC–DC converters, motor drives). Key focus areas are drain-source voltage, continuous current rating, on-resistance, switching speeds, and packaging. Common applications include high-voltage switching in power supplies and inverters.
If you mean a software/firmware module:
- I’d provide an intro describing its purpose, core features, interfaces, and typical use cases.
If it’s a hardware component (likely a power device):
- FCPF11N65 is assumed to be a high-voltage N-channel switching device used in power electronics (SMPS, DC–DC converters, motor drives). Key focus areas are drain-source voltage, continuous current rating, on-resistance, switching speeds, and packaging. Common applications include high-voltage switching in power supplies and inverters.
If you mean a software/firmware module:
- I’d provide an intro describing its purpose, core features, interfaces, and typical use cases.
Equivalent
FCPF11N65 is a 650V, ~11A N‑channel MOSFET. Possible equivalents (650V, similar current) include:
- STP11NF65 (STMicroelectronics)
- IXFN11N65 (IXYS / ON Semiconductor)
- FQPF11N65C (Fairchild)
- FQP11N65 (Fairchild)
Verify exact pinout and Rds(on) from the datasheets and match packaging before substituting.
- STP11NF65 (STMicroelectronics)
- IXFN11N65 (IXYS / ON Semiconductor)
- FQPF11N65C (Fairchild)
- FQP11N65 (Fairchild)
Verify exact pinout and Rds(on) from the datasheets and match packaging before substituting.
Features
FCPF11N65 is a high-voltage N-channel enhancement-mode power MOSFET. Key features typically include:
- Voltage/current ratings: 650 V drain–source blocking, about 11 A continuous drain current (depends on package and datasheet).
- Switching: fast switching capability suitable for high-voltage switch-mode power supplies.
- Protection/rugidity: rugged avalanche energy capability with a intrinsic body diode.
- Packages: available in common power packages (e.g., TO-220, D²PAK/DPAK, etc.).
- Gate drive: usually requires a gate drive around 10 V (threshold ~2–4 V); check exact datasheet for Qgs/Qgd.
- Applications: high-voltage SMPS, PFC, power supplies, motor drives.
Note: exact Rds(on), EAS, Qgs, and packaging vary by manufacturer and revision. For precise figures, please provide the manufacturer or a datasheet link.
- Voltage/current ratings: 650 V drain–source blocking, about 11 A continuous drain current (depends on package and datasheet).
- Switching: fast switching capability suitable for high-voltage switch-mode power supplies.
- Protection/rugidity: rugged avalanche energy capability with a intrinsic body diode.
- Packages: available in common power packages (e.g., TO-220, D²PAK/DPAK, etc.).
- Gate drive: usually requires a gate drive around 10 V (threshold ~2–4 V); check exact datasheet for Qgs/Qgd.
- Applications: high-voltage SMPS, PFC, power supplies, motor drives.
Note: exact Rds(on), EAS, Qgs, and packaging vary by manufacturer and revision. For precise figures, please provide the manufacturer or a datasheet link.
Pinout
- Pin count: 3 (in typical TO‑220/TO‑3P style packages; plus a drain tab)
- Function: N‑channel enhancement‑mode power MOSFET used as a high‑voltage switching device (G = gate, D = drain, S = source; tab is drain)
- Function: N‑channel enhancement‑mode power MOSFET used as a high‑voltage switching device (G = gate, D = drain, S = source; tab is drain)
Manufacturer
Manufacturer: ON Semiconductor (formerly Fairchild Semiconductor).
Company type: A global semiconductor company that designs, manufactures, and markets electronic components such as transistors, diodes, and integrated circuits, including power MOSFETs.
Company type: A global semiconductor company that designs, manufactures, and markets electronic components such as transistors, diodes, and integrated circuits, including power MOSFETs.
Application
FCPF11N65 is a high‑voltage, medium‑current N‑channel power switch (≈650 V class). Typical applications include:
- Switch‑mode power supplies (SMPS) and DC–DC converters
- AC motor drives and pumps
- Solar and other renewable energy inverters
- Uninterruptible power supplies (UPS) and battery chargers
- Welding and induction heating equipment
- Traction/power conditioning and PFC stages
These uses leverage its high voltage rating and switching speed in power‑electronics circuits.
- Switch‑mode power supplies (SMPS) and DC–DC converters
- AC motor drives and pumps
- Solar and other renewable energy inverters
- Uninterruptible power supplies (UPS) and battery chargers
- Welding and induction heating equipment
- Traction/power conditioning and PFC stages
These uses leverage its high voltage rating and switching speed in power‑electronics circuits.
