이미지는 참조용입니다.
FDB110N15A
+BOMPOWER FIELD-EFFECT TRANSISTOR, 9
-
제조업체비조 반도체 회사
-
제조업체 부품 #FDB110N15A
-
데이터시트 FDB110N15A DataSheet
-
재고18331
365 1일 품질 보증
7*24 영업 시간 서비스 보증
90-판매 후 1일 보증
정품 보증
사양
| 속성 | 가치 |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 92A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 11mOhm @ 92A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 61 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4510 pF @ 75 V |
| Power Dissipation (Max) | 234W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
개요
Description
The FDB110N15A refers to a specific model of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). These devices are critical components in electronic circuits, used for switching and amplifying electronic signals. The "110N15A" typically indicates the specifications and performance characteristics of the MOSFET, such as its voltage and current ratings. This model is likely designed for applications requiring efficient power management and high-speed switching, such as in power supplies, motor drives, and other electronics where energy efficiency is crucial.
These MOSFETs are known for low on-state resistance, which minimizes energy loss and heat generation, making them suitable for high-power applications. The term "FDB" could refer to a particular manufacturer's product line or series, with specific features like enhanced thermal performance or rugged construction. Overall, the FDB110N15A is an integral component for engineers and designers looking to implement reliable and efficient power control systems in various electronic devices. Always refer to the specific datasheet provided by the manufacturer for detailed technical specifications.
These MOSFETs are known for low on-state resistance, which minimizes energy loss and heat generation, making them suitable for high-power applications. The term "FDB" could refer to a particular manufacturer's product line or series, with specific features like enhanced thermal performance or rugged construction. Overall, the FDB110N15A is an integral component for engineers and designers looking to implement reliable and efficient power control systems in various electronic devices. Always refer to the specific datasheet provided by the manufacturer for detailed technical specifications.
Equivalent
The FDB110N15A is a N-channel MOSFET typically used in power management applications. Equivalent products can include:
- IRF3205 from Infineon
- STF40N60M2 from STMicroelectronics
- IXFH64N10 from IXYS
Always compare key specifications like voltage, current ratings, and Rds(on) to ensure compatibility.
- IRF3205 from Infineon
- STF40N60M2 from STMicroelectronics
- IXFH64N10 from IXYS
Always compare key specifications like voltage, current ratings, and Rds(on) to ensure compatibility.
Features
The FDB110N15A is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficient performance in various electronic applications. Key features of this MOSFET include:
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 150V, making it suitable for medium to high-voltage applications.
2. Current Capacity: It can handle a continuous drain current (I_D) of up to 110A, providing high current carrying capability.
3. R_DS(on): The on-resistance is typically low, which reduces power loss during operation and increases efficiency.
4. Package: The FDB110N15A is typically available in a TO-220 package, offering good thermal performance and ease of mounting on heatsinks for enhanced heat dissipation.
5. Applications: It is commonly used in power supply circuits, motor controllers, and other power management systems.
6. Performance: Provides fast switching speeds and high efficiency, crucial for applications requiring quick response and power conservation.
These features make the FDB110N15A a reliable choice for designers looking to implement high-efficiency power management solutions.
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 150V, making it suitable for medium to high-voltage applications.
2. Current Capacity: It can handle a continuous drain current (I_D) of up to 110A, providing high current carrying capability.
3. R_DS(on): The on-resistance is typically low, which reduces power loss during operation and increases efficiency.
4. Package: The FDB110N15A is typically available in a TO-220 package, offering good thermal performance and ease of mounting on heatsinks for enhanced heat dissipation.
5. Applications: It is commonly used in power supply circuits, motor controllers, and other power management systems.
6. Performance: Provides fast switching speeds and high efficiency, crucial for applications requiring quick response and power conservation.
These features make the FDB110N15A a reliable choice for designers looking to implement high-efficiency power management solutions.
Pinout
The FDB110N15A is a power MOSFET manufactured by ON Semiconductor/Fairchild Semiconductor. It is primarily used in applications involving high-speed switching and power management.
The FDB110N15A comes in a TO-263 package, which is a surface-mount package type. This package typically has three pins:
1. Gate (G): This pin controls the MOSFET’s operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET.
3. Source (S): This pin is where the current exits the MOSFET.
The FDB110N15A is designed for low on-resistance and high efficiency, making it suitable for high-current applications such as power supplies, motor controllers, and other electronic devices requiring efficient power management.
The FDB110N15A comes in a TO-263 package, which is a surface-mount package type. This package typically has three pins:
1. Gate (G): This pin controls the MOSFET’s operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET.
3. Source (S): This pin is where the current exits the MOSFET.
The FDB110N15A is designed for low on-resistance and high efficiency, making it suitable for high-current applications such as power supplies, motor controllers, and other electronic devices requiring efficient power management.
Manufacturer
The FDB110N15A is manufactured by ON Semiconductor. ON Semiconductor is a multinational company that specializes in designing and manufacturing semiconductors and electronic components. It serves a wide range of industries, including automotive, industrial, communications, computing, and consumer electronics. The company is known for providing energy-efficient solutions and products that help engineers and designers create innovative and efficient electronic systems.
Application
The FDB110N15A is a power MOSFET commonly used in applications such as power supplies, motor control, and DC-DC converters. Its high efficiency and low on-resistance make it suitable for switching applications, where it can handle significant power loads with minimal loss. Additionally, it can be employed in automotive systems, industrial equipment, and other electronic devices requiring reliable power management solutions. Its fast switching capabilities also make it ideal for use in synchronous rectification and other high-frequency applications.
Package
The FDB110N15A is a power MOSFET from ON Semiconductor, and it typically comes in a TO-263 package type, which is also known as D2PAK. This package is designed for surface mounting and is commonly used for high-power applications.
