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FDB52N20TM
+BOMMOSFET N-CH 200V 52A D2PAK
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제조업체온세미
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제조업체 부품 #FDB52N20TM
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데이터시트 FDB52N20TM DataSheet
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사양
| 속성 | 가치 |
| Series | UniFET™ |
| Part Status | Active |
| Base Product Number | FDB52N20 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
| Power Dissipation (Max) | 357W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
- Voltage Rating: 200V
- Current Rating: 52A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ (max) at 10V VGS
- Fast Switching: Optimized for reduced switching losses
- Package: TO-252 (DPAK), suitable for surface-mount applications
Ideal for power supplies, motor control, and DC-DC converters, it offers robust performance with low conduction losses. Its high current capability and thermal efficiency make it suitable for demanding industrial and automotive applications.
For detailed specs, refer to the datasheet.
Equivalent
- IRFB4227PbF (200V, 57A)
- STP80NF20 (200V, 80A)
- IPP052N08N5 (80V, 120A, but similar in some applications)
- AUIRF200P222 (200V, 60A)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 200V
- Current Rating: 52A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency applications
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-252 (DPAK), surface-mount design
- Low Gate Charge (Qg): Enhances switching performance
- Applications: Power supplies, motor control, DC-DC converters
This MOSFET balances high current handling with low conduction losses, making it suitable for power management in demanding circuits.