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FDC6306P

Name: FDC6306P
Rating: 4.8 (15 reviews)

+BOM

MOSFET 2P-CH 20V 1.9A SSOT6

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제조업체 부품 #FDC6306P
데이터시트 FDC6306P DataSheet
패키지 TSOT-23-6
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사양

속성	가치
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	PowerTrench®
Part Status	Active
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain(Id) @ 25°C	1.9A
Rds On(Max) @ Id Vgs	170mOhm @ 1.9A, 4.5V
Vgs(th)(Max) @ Id	1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	4.2nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds	441pF @ 10V
Power - Max	700mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount

개요

Description

The FDC6306P is a dual N-channel MOSFET from ON Semiconductor, designed for power management in low-voltage applications. It features low on-resistance (RDS(on)) and high efficiency, making it suitable for load switching, power distribution, and battery protection in portable devices.
Key specifications:
- Voltage Rating: 30V
- Current Rating: 5.3A (per channel)
- Low RDS(on): 36mΩ (max at VGS=4.5V)
- Logic-Level Gate Drive (compatible with 2.5V/3.3V/5V signals)
- Compact TSOT-6 Package
Common applications include DC-DC converters, motor control, and USB power switching. Its dual-channel design saves board space, while its fast switching improves performance in high-frequency circuits.
For detailed specs, refer to the datasheet from ON Semiconductor.

Equivalent

Equivalent products to the FDC6306P (Fairchild/ON Semiconductor) include:
- Si2306DS (Vishay)
- DMN2004DWK (Diodes Inc.)
- NDS7002A (ON Semiconductor)
- BSS138DW (Nexperia/Infineon)
These are dual N-channel MOSFETs with similar specifications (30V, ~0.5A, SOT-363 package). Verify exact parameters for your application.

Pinout

The FDC6306P is a dual P-channel MOSFET in a 6-pin TSOP package.
Pin Functions:
1. Source 1 (S1) – Connected to the source of the first MOSFET.
2. Gate 1 (G1) – Controls the first MOSFET.
3. Drain 1 (D1) – Output of the first MOSFET.
4. Drain 2 (D2) – Output of the second MOSFET.
5. Gate 2 (G2) – Controls the second MOSFET.
6. Source 2 (S2) – Connected to the source of the second MOSFET.
Key Features:
- Low on-resistance (R_DS(on)) for efficient power switching.
- Logic-level gate drive (compatible with 3.3V/5V signals).
- Commonly used in load switching, power management, and battery protection circuits.

Manufacturer

The FDC6306P is a dual N-channel and P-channel MOSFET manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions. The company was originally part of Motorola before becoming independent in 1999.
The FDC6306P is commonly used in power switching applications due to its compact design and efficiency.

Application

The FDC6306P is a dual N-channel MOSFET used in various low-voltage, high-efficiency applications. Key areas include:
1. Power Management – DC-DC converters, load switches, and power distribution in portable devices.
2. Battery Protection – Discharge control in Li-ion/polymer battery packs.
3. Motor Control – Small motor drivers in consumer electronics (e.g., drones, toys).
4. Load Switching – Efficient power switching in USB peripherals, IoT devices.
5. Automotive Electronics – Low-power modules like infotainment or lighting systems.
Its compact TSOT-23-6 package and low on-resistance (RDS(on)) make it ideal for space-constrained, energy-sensitive designs.