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FDD5810
+BOMMOSFET N-CH 60V 7.4A/37A DPAK
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제조업체온세미
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제조업체 부품 #FDD5810
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재고7404
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사양
| 속성 | 가치 |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 37A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 32A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 25 V |
| Power Dissipation (Max) | 72W (Tc) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FDD581 |
개요
Description
The curriculum often includes topics like the Black-Scholes model, hedging techniques, and the impact of market conditions on derivatives pricing. Practical applications, case studies, and real-world examples are used to illustrate the importance of derivatives in investment strategies and corporate finance.
Overall, FDD5810 aims to equip students with the analytical skills and theoretical knowledge necessary to navigate the complexities of financial derivatives, making them valuable assets in finance-related careers.
Equivalent
Features
1. Voltage Rating: Typically supports high voltage ratings, often up to 30V.
2. Low On-Resistance (RDS(on)): Ensures minimal power loss during operation, enhancing efficiency.
3. Fast Switching Speed: Ideal for high-frequency applications, improving overall circuit performance.
4. Thermal Resistance: Designed to manage heat effectively, which is crucial for reliability in thermal environments.
5. Compact Package: Usually available in a small surface-mount package, facilitating space-saving designs.
6. High Current Capability: Can handle significant current loads, making it suitable for applications like DC-DC converters and motor drivers.
7. Ease of Use: Generally compatible with standard driving circuits, simplifying integration into existing designs.
These features make the FDD5810 a versatile choice for power management in consumer electronics, automotive, and industrial applications.
Pinout
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET operation. Applying a voltage to the gate allows the channel to conduct, turning the device on.
2. Drain (D): This pin is the output of the device, where the load is connected. It carries the current from the drain to the source when the MOSFET is activated.
3. Source (S): This pin is connected to ground or the negative side of the voltage supply. It serves as the return path for the current flowing through the MOSFET.
The FDD5810 is designed for efficient power management and can handle high voltages and currents, making it suitable for various power applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.