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FDD6670A
+BOMMOSFET N-CH 30V 15A/66A DPAK
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제조업체온세미
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제조업체 부품 #FDD6670A
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데이터시트 FDD6670A DataSheet
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 15A (Ta), 66A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 8mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 22 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1755 pF @ 15 V |
| Power Dissipation (Max) | 3.2W (Ta), 63W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
개요
Description
Equivalent
1. IRF7319
2. BUK9615-55A
3. SI4936ADY
4. AOD408
5. FDMS86200
These alternatives have similar voltage and current ratings and can be used in similar applications, though always check the datasheets for specific characteristics to ensure compatibility with your design requirements.
Features
1. Dual MOSFET Configuration: Incorporates two N-channel MOSFETs in a single package, which is beneficial for compact designs.
2. Voltage and Current Ratings: Typically supports a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 12A per channel.
3. Low On-Resistance: Provides low R_DS(on) values, which results in higher efficiency due to reduced power losses.
4. Fast Switching: Designed for fast switching speeds, making it suitable for applications requiring high-frequency operations.
5. SO-8 Package: Comes in a standard SO-8 package, which is a popular choice for surface-mount technology.
6. Thermal Efficiency: Offers good thermal performance, often with integrated features to enhance heat dissipation.
7. Applications: Commonly used in DC-DC converters, power management applications, and motor control systems.
These features make the FDD6670A a versatile choice for various electronic applications requiring efficient power handling and compact design.
Pinout
1. Drain (D): Pins 1, 2, 5, and 6 are typically connected internally to the drain of each MOSFET. These pins are used to connect the load.
2. Gate (G): Pins 3 and 7 act as the gate of the individual MOSFETs. These pins control the MOSFET, turning it on or off by applying a voltage.
3. Source (S): Pins 4 and 8 are the source connections for each MOSFET. These pins are generally connected to ground in a typical application.
The FDD6670A MOSFET is used in applications requiring efficient switching, such as in power management systems. Its dual configuration allows for more compact designs and its N-channel type is suitable for high-speed switching with low on-resistance.
Manufacturer
Application
1. Power Supply Circuits: Used in DC-DC converters and power management systems.
2. Motor Control: Effective in driving motors and actuators in automotive and industrial applications.
3. Lighting Systems: Utilized in LED drivers and ballast circuits for efficient lighting control.
4. Telecommunications: Employed in infrastructure equipment for signal processing and power regulation.
5. Consumer Electronics: Found in devices like laptops and gaming consoles for power efficiency.
Its low on-resistance and fast switching speed make it suitable for high-efficiency power applications.