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FDD86252
+BOMMOSFET N-CH 150V 5A/27A DPAK
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제조업체온세미
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제조업체 부품 #FDD86252
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재고3686
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사양
| 속성 | 가치 |
| Series | PowerTrench® |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Ta), 27A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 6V, 10V |
| RdsOn(Max)@Id,Vgs | 52mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 985 pF @ 75 V |
| PowerDissipation(Max) | 3.1W (Ta), 89W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| BaseProductNumber | FDD862 |
개요
Description
Equivalent
Features
1. Frequency Range: Operates in the 850 MHz to 960 MHz and 1710 MHz to 2170 MHz bands, making it suitable for various cellular and wireless applications.
2. Output Power: Provides high output power, typically around 27 dBm for optimal performance in demanding environments.
3. Efficiency: Offers high efficiency, which helps reduce power consumption and thermal management issues.
4. Linearity: Designed to maintain linearity to support complex modulation schemes, ensuring high-quality signal transmission.
5. Integration: Combines multiple functions in a compact package, facilitating ease of integration into system designs.
6. Temperature Range: Operates effectively over a wide temperature range, enhancing reliability in diverse environments.
7. Package Type: Available in various package options for versatile design implementations.
These features make the FDD86252 suitable for applications in mobile telephony, IoT devices, and other RF communication systems.
Pinout
The pin configuration is as follows:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal of the first N-channel MOSFET.
3. Drain 1 - Drain terminal of the first N-channel MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Source 2 - Source terminal of the second N-channel MOSFET.
6. Drain 2 - Drain terminal of the second N-channel MOSFET.
7. Drain 1 (optional overlaid with Drain 2) - For common connections.
8. Source 1 (optional overlaid with Source 2) - For common connections.
The FDD86252 is commonly used in applications requiring efficient low-resistance, high-speed switching.
Manufacturer
Application
1. DC-DC Converters: Used in step-down (buck) and step-up (boost) converters for efficient voltage regulation.
2. Power Supply Circuits: Employed in switch-mode power supplies (SMPS) for optimal performance and thermal management.
3. Motor Control: Utilized in driving and controlling motors in appliances and industrial machinery.
4. Battery Management Systems: Applied in energy storage systems to enhance charging and discharging efficiency.
5. LED Drivers: Used in circuits to drive LEDs efficiently with minimal power loss.
Its low on-resistance and fast switching capabilities make it suitable for these high-efficiency applications.