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FDD86367
+BOMMOSFET N-CH 80V 100A DPAK
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제조업체온세미
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제조업체 부품 #FDD86367
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데이터시트 FDD86367 DataSheet
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재고19610
365 1일 품질 보증
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90-판매 후 1일 보증
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.2mOhm @ 80A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 88 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4840 pF @ 40 V |
| PowerDissipation(Max) | 227W (Tj) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-PAK (TO-252) |
개요
Description
If FDD86367 is related to a semiconductor or electronic component, it might denote specifications such as type (e.g., MOSFET, diode, etc.), package type, voltage rating, current rating, or other electrical characteristics. In such cases, it would be best to consult the manufacturer's datasheet or website for comprehensive technical details and application notes.
For accurate information, identifying the context—such as the manufacturer or industry—would be essential. It is recommended to verify this identifier through industry-specific resources or contact the manufacturer directly for precise specifications and applications.
Equivalent
1. IRF540N by Infineon Technologies
2. STP55NF06 by STMicroelectronics
3. FDP6030BL by ON Semiconductor
Always ensure compatibility by comparing the specific parameters and package types before substituting components.
Features
1. N-Channel MOSFET: It is an N-channel device, meaning it conducts when a positive voltage is applied to the gate relative to the source.
2. Low On-Resistance: The device has a low R_DS(on), which ensures efficient power handling with minimal energy loss.
3. High-Speed Switching: The MOSFET is designed for fast switching speeds, making it suitable for applications requiring quick turn-on and turn-off times.
4. Efficient Power Management: It is often used in power management applications due to its efficiency and reliability.
5. Thermal Performance: The device is capable of handling significant power loads while maintaining thermal efficiency.
6. Robust Design: It is designed to withstand various electrical stresses, contributing to its durability and long lifespan.
These features make the FDD86367 suitable for various electronic applications, including power supply circuits, motor control, and as a switch in power electronic systems.
Pinout
1. Pin 1 (Gate): This is the control pin used to turn the MOSFET on or off. By applying a voltage to the gate, you control the flow of current between the drain and source.
2. Pin 2 (Drain): This is the terminal where the main current flows out of the MOSFET when it is turned on.
3. Pin 3 (Source): This is the terminal where the main current flows into the MOSFET when it is turned on.
Additionally, there is a tab connected to the drain, which is used for heat dissipation. The FDD86367 is known for its low on-resistance and is used in applications such as switching regulators, motor drives, and general-purpose switching.
Manufacturer
Application
1. Power Supply Units: Used in switching power supplies for computers and consumer electronics.
2. Motor Drives: Employed in motor control systems for better efficiency and responsiveness.
3. DC-DC Converters: Integral in step-down (buck) and step-up (boost) converters for voltage regulation.
4. Battery Management Systems: Utilized in managing and protecting battery systems, particularly in electric vehicles and renewable energy setups.
5. Automotive Applications: Applied in various automotive systems due to its robustness and reliability under varying loads and temperatures.
These applications benefit from the FDD86367's low on-resistance and fast switching capabilities.