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FDG6321C
+BOMMOSFET N/P-CH 25V 500/410MA SC88
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제조업체온세미
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제조업체 부품 #FDG6321C
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데이터시트 FDG6321C DataSheet
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재고12407
365 1일 품질 보증
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90-판매 후 1일 보증
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 25V |
| Current-ContinuousDrain(Id)@25°C | 500mA, 410mA |
| RdsOn(Max)@IdVgs | 450mOhm @ 500mA, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2.3nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 50pF @ 10V |
| Power-Max | 300mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
개요
Description
To understand what FDG6321C covers, you would typically consult the course catalog or syllabus provided by the educational institution offering it. The course could cover a wide range of topics depending on the department it belongs to—be it finance, digital graphics, engineering, or another discipline. The number sequence (6321) often indicates a specific level or sequence within a department's offerings, with 'C' potentially denoting a specific section or version of the course.
For detailed information, contact the academic department directly or check the institution's website where the course is listed. This will provide insights into the course objectives, prerequisites, structure, and content.
Equivalent
Features
1. Dual N-Channel Configuration: Allows for compact design and efficient use in switching applications.
2. Low On-Resistance: Minimizes power loss, enhancing overall efficiency.
3. Low Gate Charge: Reduces drive requirements, making it suitable for low-power applications.
4. High-Speed Switching: Provides fast transition speeds, beneficial for switching power supplies and other rapid-switch applications.
5. SOT-23 Package: Compact and suitable for space-constrained designs.
6. Robust Thermal Performance: Ensures reliability under various operating conditions.
7. Applications: Ideal for load switching, DC-DC converters, and battery management systems.
These features make the FDG6321C a versatile component for designers aiming to optimize power efficiency and performance in electronic devices.
Pinout
1. Pin 1 (G1): Gate of the first (Q1) N-Channel MOSFET.
2. Pin 2 (S1): Source of the first (Q1) N-Channel MOSFET.
3. Pin 3 (S2): Source of the second (Q2) N-Channel MOSFET.
4. Pin 4 (G2): Gate of the second (Q2) N-Channel MOSFET.
5. Pin 5 (D2): Drain of the second (Q2) N-Channel MOSFET.
6. Pin 6 (D1): Drain of the first (Q1) N-Channel MOSFET.
These MOSFETs are typically utilized in power management applications, where low on-state resistance and fast switching are required.