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FDG6322C
+BOMMOSFET N/P-CH 25V SC70-6
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제조업체온세미
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제조업체 부품 #FDG6322C
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데이터시트 FDG6322C DataSheet
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재고4629
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사양
| 속성 | 가치 |
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 25V |
| Current-ContinuousDrain(Id)@25°C | 220mA, 410mA |
| RdsOn(Max)@IdVgs | 4Ohm @ 220mA, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.4nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 9.5pF @ 10V |
| Power-Max | 300mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
개요
Description
1. FDG: This might indicate the department or subject area. For example, it could relate to fields like Finance, Design, or Geography, depending on the institution.
2. 6322: This usually denotes the course level and sequence. A "6000" series might indicate a graduate-level course, suggesting advanced content.
3. C: This could signify a particular section, format, or requirement. For instance, it might designate a core course, a lab component, or be a special designation like 'capstone'.
The course itself would cover specific topics relevant to its field, potentially including advanced theories, methodologies, or practical applications. For detailed content, prerequisites, and objectives, checking the course syllabus or the academic institution’s catalog would be essential.
Equivalent
1. Fairchild NDS9936
2. ON Semiconductor NTLJS4115N
3. Vishay Si1902DL
4. Texas Instruments CSD75208W1015
5. Infineon BSC0802LS
These alternatives should have similar specifications, but always verify the datasheets to ensure compatibility with your application.
Features
1. Dual N-Channel Configuration: It contains two N-channel MOSFETs in a single package, allowing for compact design and efficient use in circuits requiring dual MOSFETs.
2. Low On-State Resistance: This feature ensures minimal power loss and enhanced efficiency during operation.
3. Fast Switching Speed: The MOSFET supports rapid switching, which is beneficial for applications requiring high-speed performance.
4. Compact Package: Typically found in a small SOT-23 package, which is ideal for space-constrained applications.
5. High Power Density: Despite its small size, it can handle significant power loads, making it suitable for various power management applications.
6. Wide Range of Applications: Commonly used in load switching, DC-DC converters, and battery management systems.
These features make the FDG6322C a versatile component in various electronic applications, particularly where space and efficiency are crucial.
Pinout
1. Pin 1 (G1): Gate of the first N-Channel MOSFET.
2. Pin 2 (S1): Source of the first N-Channel MOSFET.
3. Pin 3 (S2): Source of the second N-Channel MOSFET.
4. Pin 4 (G2): Gate of the second N-Channel MOSFET.
5. Pin 5 (D2): Drain of the second N-Channel MOSFET.
6. Pin 6 (D1): Drain of the first N-Channel MOSFET.
The FDG6322C is designed for high-efficiency power conversion applications and is widely used in battery management systems, DC-DC converters, and load switches. Its compact size is suitable for space-constrained applications.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation modules for efficient power delivery.
2. Switching Circuits: Ideal for fast switching applications in consumer electronics.
3. Motor Control: Employed in driving small motors or actuators in automotive and industrial systems.
4. Load Switches: Serves as a switch for power distribution in battery-operated devices.
5. LED Drivers: Utilized in controlling LED lighting systems for energy-efficient illumination.
Its low on-resistance and high efficiency make it suitable for portable and space-constrained devices.