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FDMC2523P
+BOMPOWER FIELD-EFFECT TRANSISTOR, 3
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제조업체비조 반도체 회사
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제조업체 부품 #FDMC2523P
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데이터시트 FDMC2523P DataSheet
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패키지 WDFN-8
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재고1253
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사양
| 속성 | 가치 |
| Package / Case | Bulk |
| Series | QFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.5Ohm @ 1.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 9 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 270 pF @ 25 V |
| Power Dissipation (Max) | 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-MLP (3.3x3.3) |
개요
Description
If FDMC2523P pertains to a specific subject, such as finance or data management, it might be an introductory course that covers fundamental concepts relevant to that field. Typically, introductory courses serve to provide a foundational understanding of key principles, theories, and practices. Students might engage with lectures, discussions, and practical exercises to build knowledge that will be necessary for more advanced studies or professional applications.
For specific details about FDMC2523P, including its curriculum, prerequisites, and learning outcomes, you would typically consult the course catalog or syllabus provided by the educational institution offering the course.
Equivalent
1. SI2323DS (Vishay)
2. IRF5305 (Infineon Technologies)
3. FDS6679AZ (onsemi)
4. BSS84 (Nexperia)
These alternatives should be verified against specific application requirements, such as voltage, current ratings, and package type, to ensure compatibility.
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to -20V and a continuous drain current (I_D) of around -4.2A at 25°C.
2. Low On-Resistance: The MOSFET has a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency in electronic circuits.
3. Gate Threshold Voltage: It usually features a gate threshold voltage (V_GS(th)) around -1V to -3V, allowing for easy integration with various logic levels.
4. Fast Switching Speed: The FDMC2523P is designed for fast switching, making it suitable for high-frequency applications.
5. SOT-23 Package: It is typically available in a SOT-23 package, which is compact and suitable for space-constrained designs.
6. Thermal Performance: The device offers good thermal performance, which allows for reliable operation under different thermal conditions.
These features make the FDMC2523P suitable for a wide range of applications, including power management, load switching, and signal processing.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S): This pin is where the current enters the MOSFET. In certain configurations, multiple source pins may be present for better current handling.
3. Drain (D): This pin is the output through which the current exits when the MOSFET is turned on.
4. Drain Tabs: Some leads and tabs are connected internally to the drain, providing better thermal performance and lower electrical resistance.
The FDMC2523P MOSFET is typically used in applications requiring efficient power management, such as DC-DC converters, load switches, and other power-related applications. For precise pin assignments and further details, it is recommended to consult the manufacturer's datasheet.